OP999 TT Electronics

OP999 OP993 Choice of TO-18 (OP993) or T-1 package (OP999) Small package style ideal for space-limited applications Linear response vs. irradiance Fast switching time Choice of narrow or wide receiving angle Each OP993 and OP999 device consists of a PIN silicon photodiode molded in a dark blue injection molded shell package that provides excellent optical and mechanical axis alignment, optical lens surface, control of chip placement and consistency of the outside package dimensions. OP993 has a TO-18 package style and a wide receiving angle that provides excellent on-axis coupling. OP999 has a T-1 package style and a narrow receiving angle that provides excellent on-axis coupling. Both devices are 100% production tested for close correlation with OPTEK GaAIAs emitters. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. Applications: Ordering Information Part Viewing Lead Non-contact reflective object sensor Machine safety Number Sensor Angle Length Assembly line automation End of travel sensor OP993 Photodiode 118 Machine automation Door sensor 0.75 min OP999 Photodiode 18 OP993 1 OP999 Pin Sensor 1 Cat hode 2 A node 2 OP993 MILLIMETERS DIMENSIONS ARE IN: OP999 INCHES 1 Pin Sensor 1 A node 2 Cat hode CONTAINS POLYSULFONE 2 To avoid stress cracking, we suggest using ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing MILLIMETERS DIMENSIONS ARE IN: INCHES structural failure in OPTEK S molded plascti s. Ro HS Reverse Breakdown Voltage 60 V Storage & Operating Temperature Range -40 C to +100 C (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron 260 C Reverse Breakdown Voltage 60 V (2) Power Dissipation 100 mW Reverse Light Current 2 (3) I OP993 12.5 - 28.5 A V = 5 V, E = 1.7 mW/cm L R E 2 (3) OP999 6.5 - 15 V = 5 V, E = 0.25 mW/cm R E (4) I Reverse Dark Current 1 60 nA V = 30 V, E = 0 D R E V Reverse Breakdown Voltage 60 V I = 100 A (BR) R V Forward Voltage 1.2 V I = 1 mA F F C Total Capacitance 4 pF V = 20 V, E = 0, f = 1.0 MHz T R E t Rise Time 5 r ns V = 20 V, = 850 nm, R = 50 R L t Fall Time 5 f Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. A maximum of 20 grams force ma y be applied to leads when soldering. (2) Derate linearly 1.67 mW/ C above 25 C. 2 (3) Light source is an unlfi tered GaAIAs emingtti diode operating at peak emission wavelength of 890 nm and E of 1.7 mW/cm for OP993 E(APT) 2 and 0.25mW/cm for OP999 average within a 0.25 diameter aperture. (4) This dimension is held to within 0.005 on the flange edge and may vary up to 0.020 in the area of the leads.