OPR5005TR

OPR5005 Features: High temperature operation Surface mountable Compact size Excellent ambient light protection Description: The OPR5005 is a miniature reflective sensor that combines a silicon phototransistor with a GaAIAs LED in a high - temperature opaque polyamide chip carrier. It is designed to sense the motion or proximity of diffuse reflective surfaces in space-limited applications. The opaque package insures very low cross -talk and shields the phototransistor from ambient light sources, while the silicone encapsulated package allows operation over a wide temperature range. The gold -plated wraparound solder pads oeff r exceptional storage and wetting characteristics. See Application Bulletin 237 for handling instructions. Ordering Information Applications: Reflective Motion sensors Switch LED Peak of I (A) I (mA) V Packaging C(ON) F CE Space-limited applications Part Number Wavelength Sensor Elements Min Typ / Max Typ / Max Applications requiring OPR5005 890 nm Phototransistor 2 725 20 / 50 5 / 30 Chip Tray ambient light protection Can be stored in dirty Pin Description Warning: Front Win- 1 Collector dows are pressure sensi- 2 Anode vti e. Do not apply pres- 3 Cathode sure or high vacuum to 4 Emitter window. RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue E 05/2018 Page 1 TT electronics plc Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Storage and Operating Temperature -55C to +125 C (1) Solder reflow time within 5C of peak temperature is 20 to 40 seconds 250 C LED Forward DC Current 50 mA Peak Forward Current (1 s pulse .03% duty cycle) 1.0 A Reverse DC Voltage 2.0 V (2) Power Dissipation 75 mW Phototransistor Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5.0 V Collector DC Current 25 mA (2) Power Dissipation 75 mW Electrical Characteriscti s (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS LED V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 A V = 2.0 V R R Phototransistor V Collector-Emitter Breakdown Voltage 30 - - V I = 100 A (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E V = 5.0 V, I = 0, CE F I Collector Dark Current - - 100 nA CEO 2 E = 0.10 W/cm e Combined V = 5.0 V, I = 20 mA, (4) CE F I On-State Collector Current 725 - - A C(ON) (3) d = 0.050 (1.27 mm) I = 20 mA, I = 100 a, (4) F C V Collector-Emitter Saturation Voltage - - 0.4 V CE(SAT) (3) d = 0.050 (1.27 mm) (5) I Crosstalk - - 75 A I = 20mA, V = 5V CX F CE Notes: (1) Solder time less than 5 seconds at temperature extreme. (2) Derate linearly 0.75 mW/C above 25C. (3) Distance from the assembly face to the reefl ctive surface is d. (4) Measured using Eastman Kodak neutral white test card with 90% white diffuse reefl ctance as a reefl cngti surface. (5) Crosstalk (I ) is the collector current measured using the indicated current and using a Munsell N2.25 black test card against the face of the CX part. General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue E 05/2018 Page 2 TT electronics plc