Product Information

PR804BA33

PR804BA33 electronic component of U-NIK

Datasheet
MOSFET N Trench 30V 37A 2.3V @ 250uA 1.4 mΩ @ 20A,10V SMD RoHS
Manufacturer: U-NIK
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7377 ea
Line Total: USD 0.74

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PR804BA33
U-NIK

1 : USD 0.6224
10 : USD 0.5121
30 : USD 0.4642
100 : USD 0.4039
500 : USD 0.3789
1000 : USD 0.3623

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The U-NIK PR804BA33 is a MOSFET N Trench 30V 37A 2.3V @ 250uA 1.4 mO @ 20A,10V SMD RoHS type power device. It features dual N-channel trench technology with very low on-resistance, making it suitable for high efficiency switching applications. This power MOSFET provides low gate charge, low gate resistance, and fast switching speed, for lower power application requirements. It is RoHS compliant for environmental sustainability, and is suitable for SMD layout design. This PR804BA33 is available in SOT-223 or TO-220 packages for easy integration into a variety of applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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