Product Information

LPM3413B3F

LPM3413B3F electronic component of LOWPOWER

Datasheet
MOSFET P Trench 20V 3A 1V @ 250uA 95 mΩ @ 3A,4.5V SOT23-3 RoHS
Manufacturer: LOWPOWER
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0633 ea
Line Total: USD 0.63

2415 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
2415 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 10
Multiples : 10

Stock Image

LPM3413B3F
LOWPOWER

10 : USD 0.0601
100 : USD 0.0488
300 : USD 0.0431
3000 : USD 0.0389
6000 : USD 0.0355
9000 : USD 0.0338

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The LOWPOWER LPM3413B3F is a dual N-channel MOSFET power device, designed specifically for low voltage, low power applications. It is housed in a SOT-23-3 RoHS package and is capable of dissipating up to 3A of current. The threshold voltage is 1V with a maximum drain-source on-resistance of 95m? @3A and 4.5V of gate-source voltage. The device features a blazing fast 20V P Trench Technology with maximum of 250uA turn-on gate charge. Ideal for switching applications in the automotive, industrial and consumer markets.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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