PE606BA U-NIK

PE606BA electronic component of U-NIK
PE606BA U-NIK
PE606BA MOSFETs
PE606BA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PE606BA MOSFETs across the USA, India, Europe, Australia, and various other global locations. PE606BA MOSFETs are a product manufactured by U-NIK. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PE606BA
Manufacturer: U-NIK
Category: MOSFETs
Description: MOSFET N Trench 30V 23A (Tc) 2.3V @ 250uA 27 mΩ @ 6A,4.5V DFN33 RoHS
Datasheet:
Price (USD)
5: USD 0.1789 ea
Line Total: USD 0.89 
Availability : 0
  
QtyUnit Price
5$ 0.1789
50$ 0.1458
150$ 0.1292
500$ 0.1168
2500$ 0.1068
5000$ 0.1019
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PE606BA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PE606BA and other electronic components in the MOSFETs category and beyond.

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PE606BA with MOSFET N Trench 30V 23A (Tc) 2.3V @ 250uA 27 mOhm @ 6A,4.5V DFN33 RoHS manufactured by U-NIK is a type of MOSFET transistor. It is constructed with an N-channel trench design and features a low on-resistance of 27 milliohms. The maximum power dissipation is 30V, while its gate threshold voltage is 2.3V with a max current rating of 250uA. The device also supports a maximum drain-source voltage of 30V with 23A continuous drain current. The package is a 4.5 x 33 millimeter DFN33 and it is compliant with the RoHS Directive.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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