Product Information

2N65G-TN3-R

2N65G-TN3-R electronic component of Unisonic

Datasheet
MOSFET N Channel 650V 2A 1.4V @ 250uA 9.5O @ 1A,10V TO-252 RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.344 ea
Line Total: USD 0.34

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

2N65G-TN3-R
Unisonic

1 : USD 0.344
10 : USD 0.2856
30 : USD 0.2432
100 : USD 0.2085
500 : USD 0.2025
1000 : USD 0.1995

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
LoadingGif

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TechnologiesThe 2N65G-TN3-R is a MOSFET N Channel 650V 2A 1.4V @ 250uA 9.5O @ 1A,10V TO-252 RoHS manufactured by Unisonic Technologies. It is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which uses insulated gate terminals to control the flow of current. It is an N-Channel type, meaning it is a type of transistor that allows current to flow through it when a negative voltage is applied to the gate. The N-Channel type is normally off, meaning that it does not allow current to flow unless a negative voltage is applied to the gate. It has a voltage rating of 650V, a 2A current rating, a 1.4V at 250uA gate threshold voltage (Vt), and a 9.5 Ohm @1A, 10V drain to source resistance (RDSon). It is housed in a TO-252 RoHS compliant package which is a three-pin package, typically used for surface mount applications. The 2N65G-TN3-R is manufactured by Unisonic Technologies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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