EMF03N02HR (Preliminary) N ChannelLogic Level EnhancementModeFieldEffect Transistor Product Summary: D BVDSS 20V 4.0m RDSON (MAX.) ID 71A G S UIS,Rg100% Tested Pb Free Lead Plating &Halogen Free ABSOLUTEMAXIMUM RATINGS (T =25 CUnless OtherwiseNoted) A PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage V 10 V GS T =25 C 71 C ContinuousDrain Current I D T =100C 45 C A 1 Pulsed Drain Current I 160 DM AvalancheCurrent I 50 AS AvalancheEnergy L=0.1mH, ID=50A, RG=25 E 125 AS mJ 2 RepetitiveAvalanche Energy L=0.05mH E 62.5 AR T =25 C 35 C PowerDissipation P W D T =100C 14 C Operating Junction & Storage TemperatureRange T, T 55 to150 C j stg 100%UIStesting in conditionof V =20V, L=0.1mH,V =4.5V, I =30A, Rated V =20VN CH D G L DS THERMAL RESISTANCERATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction to Case R 3.5 JC C / W Junction to Ambient R 50 JA 1 Pulsewidth limited bymaximumjunction temperature. 2 Duty cycle 1 3 2 50C/ W when mounted on a 1 in pad of 2oz copper. EMF03N02HR (Preliminary) ELECTRICAL CHARACTERISTICS(T =25 C,Unless OtherwiseNoted) J PARAMETER SYMBOL TESTCONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain SourceBreakdown Voltage V 20 V V =0V, I =250 A (BR)DSS GS D GateThreshold Voltage V V =V ,I =250 A 0.35 0.55 1 GS(th) DS GS D Gate Body Leakage I V =0V, V =10V 100 nA GSS DS GS ZeroGate VoltageDrain Current I V =16V, V =0V 1 A DSS DS GS V =12V, V =0V,T =125 C 25 DS GS J 1 On StateDrainCurrent I V =10V, V =4.5V 71 A D(ON) DS GS 1 Drain SourceOn StateResistance R V =10V,I =15A 3.5 3.8 DS(ON) GS D V =4.5V,I =10A 3.65 4.0 GS D m V =2.5V,I =10A 4.1 5.5 GS D 1 Forward Transconductance g V =5V, I =15A 30 S fs DS D DYNAMIC InputCapacitance C 3188 iss V =0V, V =10V,f =1MHz GS DS pF OutputCapacitance C 377 oss ReverseTransferCapacitance C 273 rss GateResistance R V =15mV,V =0V, f=1MHz 1.3 g GS DS 1,2 TotalGateCharge Q (V =10V) 76 g GS V =10V, V =10V, DS GS Q (V =4.5V) 35 g GS nC I =15A D 1,2 Gate SourceCharge Q 2.9 gs 1,2 Gate Drain Charge Q 7.4 gd 1,2 Turn On DelayTime t 30 d(on) 1,2 Rise Time t V =10V, 40 r DS nS 1,2 Turn Off Delay Time t I =15A, V =10V,R =2.7 80 d(off) D GS GS 1,2 FallTime t 45 f SOURCE DRAINDIODERATINGSANDCHARACTERISTICS(T =25 C) C ContinuousCurrent I 71 S A 3 Pulsed Current I 160 SM 1 Forward Voltage V I =15A, V =0V 1.2 V SD F GS ReverseRecoveryTime t I =I , dl /dt =100A / S 32 nS rr F S F ReverseRecoveryCharge Q 18 nC rr 1 Pulse test : PulseWidth 300 sec,Duty Cycle 2 .