Product Information

4N60L-B-TN3-R

4N60L-B-TN3-R electronic component of Unisonic

Datasheet
MOSFET N Trench 600V 4A 4V @ 250uA 2.5 Ω @ 2.2A,10V TO-252-2 (DPAK) RoHS
Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4268 ea
Line Total: USD 0.43

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

4N60L-B-TN3-R
Unisonic

1 : USD 0.4268
10 : USD 0.3533
30 : USD 0.3003
100 : USD 0.2564
500 : USD 0.2489
1000 : USD 0.2451

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

TechnologiesThe 4N60L-B-TN3-R is a Trench MOSFET N-channel MOSFET manufactured by Unisonic Technologies. This product is designed with a TO-252-2 (DPAK) package and is RoHS compliant. The 4N60L-B-TN3-R has a maximum blocking voltage of 600V, a drain current of 4A, gate-source voltage of 4V @ 250uA, a source-drain resistance of 2.5 Ohms @ 2.2A, and a gate-threshold voltage of 10V. This product is designed for use in motor control, power management, switching power supplies, and other general purpose applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic may also be referenced as

Unisonic Tech
UTC(Unisonic Tech)

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