Product Information

4N65L-TA3-T

4N65L-TA3-T electronic component of Unisonic

Datasheet
MOSFET N Trench 650V 4A 4V @ 250uA 2.5 Ω @ 2.2A,10V TO-220 (TO-220-3) RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4601 ea
Line Total: USD 0.46

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

4N65L-TA3-T
Unisonic

1 : USD 0.4601
10 : USD 0.3496
30 : USD 0.3293
100 : USD 0.3091

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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TechnologiesThe 4N65L-TA3-T MOSFET from Unisonic Technologies is a N-type trench MOSFET in a TO-220-3 package. This device has a maximum drain source voltage of 650V, a drain current of 4A, a gate-source voltage of 4V, an on resistance of 250uA, an on resistance of 2.5 Ohms at 2.2A and 10V, and meets RoHS specifications. The wide range of features makes the 4N65L-TA3-T an ideal choice for power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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