Product Information

4N65L-Q-TM3-T

4N65L-Q-TM3-T electronic component of Unisonic

Datasheet
MOSFET N Trench 650V 4A 4V @ 250uA 2.5 O @ 2.2A,10V TO-251 (I-PAK) RoHS
Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3137 ea
Line Total: USD 0.31

1 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

4N65L-Q-TM3-T
Unisonic

1 : USD 0.304
10 : USD 0.2493
30 : USD 0.226
80 : USD 0.1967
480 : USD 0.1838
960 : USD 0.1759

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The 4N65L-Q-TM3-T is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) manufactured by Unisonic. It is a N Trench MOSFET with a breakdown voltage of 650V and a current rating of 4A. It has a voltage drop of 4V @ 250uA and a gate charge of 2.5O @ 2.2A, 10V. It is packaged in a convenient TO-251 (I-PAK) RoHS (Restriction of Hazardous Substances) package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic may also be referenced as

Unisonic Tech
UTC(Unisonic Tech)

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