X-On Electronics has gained recognition as a prominent supplier of HY5110W MOSFETs across the USA, India, Europe, Australia, and various other global locations. HY5110W MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HY5110W HuaYi

Name: HY5110W
Brand: HuaYi
SKU: HY5110W_HuaYi
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	HY5110W
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	MOSFET N Trench 100V 316A 4V @ 250uA 2.5 mÎ© @ 158A,10V TO-247 (AC) RoHS
Datasheet:	HY5110W Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.3428 ea
Line Total: USD 3.34

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

HY5110W More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 11 Jun to Mon. 16 Jun MOQ : 1 Multiples : 1	1 : USD 3.3428 10 : USD 2.1513 30 : USD 1.7338 100 : USD 1.5275 500 : USD 1.4356 1000 : USD 1.3951

Specifications

Manufacturer HuaYi HuaYi
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 247 (AC) TO - 247 (AC)
Brand Category Huayi Huayi
Fet Type n trench n trench
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 316 A 316 A
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 2.5 m @ 158a,10v 2.5 m @ 158a,10v
Power Dissipation-Max Ta 500 W 500 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 316 A 316 A
Power Dissipation Pd 500 W 500 W
Drain Source On Resistance Rdson@Vgs Id 2.5 mOhms @10V , 158A 2.5 mOhms @10V , 158A
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the HY5110W from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY5110W and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HY5110W MOSFET N Trench manufactured by HuaYi is a 100V 316A 4V field effect transistor with a Rating of 250uA 2.5 mÎ© @ 158A and a 10V TO-247 (AC) RoHS leaded packing. This MOSFET N Trench is RoHS complaint and is suitable for high power switch applications as well as a wide range of other electronic applications. This product has a drain-source breakdown voltage of 100V/316A and a gate-source breakdown voltage of 4V. It has a gate-source threshold voltage of 2.5mÎ© at 158A, and is offered in a 10 voltage TO-247 (AC) leaded packaging.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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