UJ4C075018K3S UnitedSiC

UJ4C075018K3S electronic component of UnitedSiC
UJ4C075018K3S UnitedSiC
UJ4C075018K3S MOSFETs
UJ4C075018K3S  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of UJ4C075018K3S MOSFETs across the USA, India, Europe, Australia, and various other global locations. UJ4C075018K3S MOSFETs are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.UJ4C075018K3S
Manufacturer:UnitedSiC
Category:MOSFETs
Description:N-Channel 750V 81A (Tc) 385W (Tc) Through Hole TO-247-3
Datasheet:UJ4C075018K3S Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 16.308 ea
Line Total: USD 16.31 
Availability : 144
  
Ship by Fri. 19 Jun to Tue. 23 Jun
QtyUnit Price
1$ 16.308
10$ 9.031
100$ 7.909
  

Availability144
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 16.308
10$ 9.031
100$ 7.909

   
Manufacturer
Product Category
Package / Case
Packaging
Technology
Series
Part Status
Fet Type
Drain To Source Voltage Vdss
Current - Continuous Drain Id 25 C
Rds On Max Id Vgs
Vgsth Max Id
Gate Charge Qg Max Vgs
Vgs Max
Input Capacitance Ciss Max Vds
Fet Feature
Power Dissipation Max
Operating Temperature
Mounting Type
Supplier Device Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UJ4C075018K3S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UJ4C075018K3S and other electronic components in the MOSFETs category and beyond.

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750V-18mW SiC FET Rev. A, October 2020 DATASHEET Description The UJ4C075018K3S is a 750V, 18mW G4 SiC FET. It is based on a UJ4C075018K3S unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads CASE CASE and any application requiring standard gate drive. D (2) Features w On-resistance R : 18mW (typ) DS(on) w Operating temperature: 175C (max) G (1) w Excellent reverse recovery: Q = 102nC rr w Low body diode V : 1.14V FSD w Low gate charge: Q = 37.8nC G 1 w Threshold voltage V : 4.8V (typ) allowing 0 to 15V drive 2 G(th) 3 S (3) w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number Package Marking UJ4C075018K3S TO-247-3L UJ4C075018K3S Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075018K3S Rev. A, October 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 750 V DS Gate-source voltage V DC -20 to +20 V GS T = 25C 81 A C 1 I Continuous drain current D T = 100C 60 A C 2 T = 25C Pulsed drain current I 205 A C DM 3 L=15mH, I =3.6A E 97.2 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 385 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max R Thermal resistance, junction-to-case 0.3 0.39 C/W qJC Datasheet: UJ4C075018K3S Rev. A, October 2020 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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