UF3C120080K3S UnitedSiC

UF3C120080K3S electronic component of UnitedSiC
UF3C120080K3S UnitedSiC
UF3C120080K3S MOSFETs
UF3C120080K3S  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of UF3C120080K3S MOSFETs across the USA, India, Europe, Australia, and various other global locations. UF3C120080K3S MOSFETs are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. UF3C120080K3S
Manufacturer: UnitedSiC
Category: MOSFETs
Description: MOSFET 1200V/80mOhm, SiC, FAST CASCODE, G3, TO-247-3L, REDUCED Rth
Datasheet: UF3C120080K3S Datasheet (PDF)
Price (USD)
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Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 16.487
10$ 15.1511
30$ 14.5194
N/A

   
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We are delighted to provide the UF3C120080K3S from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UF3C120080K3S and other electronic components in the MOSFETs category and beyond.

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1200V-80mW SiC FET Rev. A, December 2019 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3C120080K3S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, CASE CASE making it ideal for switching inductive loads when used with D (2) recommended RC-snubbers, and any application requiring standard gate drive. Features w Typical on-resistance R of 80mW DS(on),typ G (1) w Maximum operating temperature of 175C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance 1 2 3 w ESD protected, HBM class 2 S (3) w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Typical applications Part Number Package Marking w EV charging UF3C120080K3S TO-247-3L UF3C120080K3S w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120080K3S Rev. A, December 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 33 A C 1 I Continuous drain current D T = 100C 24 A C 2 T = 25C Pulsed drain current I 77 A C DM 3 L=15mH, I =2.8A E 58.5 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 254.2 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.45 0.59 C/W qJC Datasheet: UF3C120080K3S Rev. A, December 2019 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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