10A -1200V SiC Schottky Diode Rev. C, February 2020 DATASHEET Description rd UnitedSiC offers the 3 generation of high performance SiC Merged- UJ3D1210TS PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CASE Features CASE w Maximum operating temperature of 175C w Easy paralleling w Extremely fast switching not dependent on temperature w No reverse or forward recovery w Enhanced surge current capability, MPS structure w Excellent thermal performance, Ag sintered 1 2 w 100% UIS tested w AEC-Q101 qualified 1 2 Typical applications w Power converters Part Number Package Marking w Industrial motor drives w Switch mode power supplies UJ3D1210TS TO-220-2L UJ3D1210TS w Power factor correction modules Datasheet: UJ3D1210TS Rev. C, February 2020 1Maximum Ratings Parameter Symbol Test Conditions Value Units V DC blocking voltage 1200 V R Repetitive peak reverse voltage, T =25C V 1200 V J RRM Surge peak reverse voltage V 1200 V RSM T = 157C Maximum DC forward current I 10 A C F T = 25C, t = 10ms Non-repetitive forward surge current 120 C p I A FSM sine halfwave T = 110C, t = 10ms 110 C p T = 25C, t = 10ms Repetitive forward surge current 54.2 C p I A FRM sine halfwave, D=0.1 T = 110C, t = 10ms 32.3 C p T = 25C, t = 10ms 720 C p I Non-repetitive peak forward current A F,max T = 110C, t = 10ms 720 C p T = 25C, t = 10ms 72 C p 2 2 2 i t value i dt A s T = 110C, t = 10ms 60 C p T = 25C 220.6 C P Power dissipation W tot T = 157C 26.5 C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Soldering temperatures, wavesoldering only T 1.6mm from case for 10s 260 C sold allowed at leads Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.52 0.68 C/W qJC Datasheet: UJ3D1210TS Rev. C, February 2020 2