FFSH40120ADN-F085 Silicon Carbide Schottky Diode 1200 V, 40 A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of 1. Anode 2. Cathode/ 3. Anode power semiconductor. System benefits include highest efficiency, Case faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size and cost. Features Max Junction Temperature 175C Avalanche Rated 210 mJ High Surge Current Capacity Positive Temperature Coefficient 1 Ease of Paralleling TO2473LD 2 3 CASE 340CH No Reverse Recovery/No Forward Recovery AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM Compliant Y&Z&3&K Applications FFSH Automotive HEVEV Onboard Chargers 40120ADN Automotive HEVEV DCDC Converters Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH40120ADN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2019 Rev. 2 FFSH40120ADNF085/DFFSH40120ADN F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 1200 V RRM E Single Pulse Avalanche Energy (Note 1) 210 mJ AS I Continuous Rectified Forward Current T < 148C 20* / 40** A F C Continuous Rectified Forward Current T < 135C 25* / 50** C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1190 A F, Max C 990 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 135 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 74 A F,RM p Ptot Power Dissipation T = 25C 220 W C T = 150C 37 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 210 mJ is based on starting T = 25C, L = 0.5 mH, I = 29 A, V = 50 V. AS J AS *Per leg, ** Per Device THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.68* / 0.34** C/W JC *Per leg, ** Per Device ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 20 A, T = 25C 1.45 1.75 V F F C I = 20 A, T = 125C 1.7 2.0 F C I = 20 A, T = 175C 2.0 2.4 F C I Reverse Current V = 1200 V, T = 25C 200 A R R C V = 1200 V, T = 125C 300 R C V = 1200 V, T = 175C 400 R C Q Total Capacitive Charge V = 800 V 120 nC C C Total Capacitance pF V = 1 V, f = 100 kHz 1220 R V = 400 V, f = 100 kHz 111 R V = 800 V, f = 100 kHz 88 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH40120ADNF085 FFSH40120ADN TO2473LD 30 Units / Tube (Pb-Free / Halogen Free) www.onsemi.com 2