Product Information

VSB012N03MS

VSB012N03MS electronic component of Vanguard

Datasheet
MOSFET N Trench 30V 38A (Tc) 2.2V @ 250uA 16 mΩ @ 10A,4.5V TDFN3.3X3.3 RoHS
Manufacturer: Vanguard
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4019 ea
Line Total: USD 0.4

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

VSB012N03MS
Vanguard

1 : USD 0.3899
10 : USD 0.3164
30 : USD 0.285
100 : USD 0.2457
500 : USD 0.1966
1000 : USD 0.1861

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

SemiconductorThe VSB012N03MS is a MOSFET N Trench 30V 38A (Tc) 2.2V @ 250uA 16 mO @ 10A,4.5V TDFN3.3X3.3 RoHS manufactured by Vanguard Semiconductor. This MOSFET is primarily used in power switching circuits for enabling devices in applications that require high current capability. The device's features include low ON resistance, fast switching response, and high performance due to its trench technology. It can handle up to 30V at 38Amps and comes in a compact thermal area of 3.3x3.3mm. In addition, this small footprint package component has been designed to meet RoHS compliance standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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