Product Information

VSD013N10MS

VSD013N10MS electronic component of Vanguard

Datasheet
MOSFET N Trench 100V 52A (Tc) 3V @ 250uA 15 mΩ @ 5A,4.5V TO-252 RoHS
Manufacturer: Vanguard
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7812 ea
Line Total: USD 0.78

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

VSD013N10MS
Vanguard

1 : USD 0.7812
10 : USD 0.6506
30 : USD 0.5552
100 : USD 0.4774
500 : USD 0.4621
1000 : USD 0.4571

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

TechnologyThe Vanguard Technology VSD013N10MS is a MOSFET N-Trench 100V 52A 3V @ 250uA 15mΩ @ 5A, 4.5V TO-252 RoHS device. It is a N-channel MOSFET designed for power switching applications. It is manufactured using Vanguard's advanced trench technology which provides excellent switching characteristics and very low on-resistance. It has a 100V drain-source blocking voltage rating and a 52A continuous drain current rating. It has a low 3V gate-source threshold voltage and 15mΩ on-resistance at 5A. The device is packaged in a TO-252 RoHS package for superior thermal performance. It is ideal for use in power switching and other high-current applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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