Product Information

VSD007N06MS

VSD007N06MS electronic component of Vanguard

Datasheet
MOSFET N Trench 60V 85A (Tc) 2.5V @ 250uA 9 mΩ @ 10A,4.5V TO-252 RoHS
Manufacturer: Vanguard
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5903 ea
Line Total: USD 0.59

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

VSD007N06MS
Vanguard

1 : USD 0.5903
10 : USD 0.4824
30 : USD 0.4045
100 : USD 0.3416
500 : USD 0.3316
1000 : USD 0.3241

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VSD007N06MS MOSFET is a high-performance N-channel trench MOSFET manufactured by Vanguard. It is designed for a drain-source voltage of up to 60 volts, providing a current carrying capability of up to 85 A. It features a gate threshold voltage of 2.5 V and an ultra-low on-state resistance of 9 mΩ, making it well-suited for applications requiring high switching speed and low losses. The maximum drain-source current at low gate voltage is 250 µA, and it has a maximum drain-source voltage at high gate current of 10 A, 4.5 V. This device is packaged in an industry standard TO-252 RoHS-compliant package for surface mount applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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