Product Information

VB1102M

VB1102M electronic component of VBsemi Elec

Datasheet
MOSFET N Channel 100V 2A 2.8V @ 250uA 240mO @ 1.5A,10V SOT23 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3389 ea
Line Total: USD 1.69

1779 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1280 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5

Stock Image

VB1102M
VBsemi Elec

5 : USD 0.3292
50 : USD 0.2722
150 : USD 0.2477
500 : USD 0.2171
3000 : USD 0.176
6000 : USD 0.168

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VB1102M is a MOSFET N-Channel device manufactured by VBsemi Elec. It is designed for use as a low-voltage high-current switch and features a breakdown voltage of 100V and a maximum current rating of 2A. It has an operating voltage of 2.8V and a gate-source threshold voltage of 250uA. The part also features a source-drain resistance of 240 milli-Ohms and a gate-source voltage of 10V, all in a SOT23 RoHS package. The VB1102M is an ideal solution for applications requiring high power, low noise and fast switching times.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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