2N4416 2N4416A www.centralsemi.com SILICON DESCRIPTION: N-CHANNEL JFETS The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N4416 2N4416A UNITS A Gate-Drain Voltage V 30 35 V GD Gate-Source Voltage V 30 35 V GS Drain-Source Voltage V 30 35 V DS Gate Current I 10 mA G Power Dissipation P 300 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N4416 2N4416A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =20V, V=0 - 100 - 100 pA GSS GS DS I V =20V, V =0, T=150C - 100 - 100 nA GSS GS DS A I V =15V, V=0 5.0 15 5.0 15 mA DSS DS GS BV I=1.0A 30 - 35 - V GSS G V V =15V, I=1.0nA - 6.0 2.5 6.0 V GS(off) DS D g V =15V, V =0, f=1.0kHz 4,500 7,500 4,500 7,500 S FS DS GS g V =15V, V =0, f=1.0kHz - 50 - 50 S OS DS GS C V =15V, V =0, f=1.0MHz - 1.0 - 1.0 pF rss DS GS C V =15V, V =0, f=1.0MHz - 4.0 - 4.0 pF iss DS GS C V =15V, V =0, f=1.0MHz - 2.0 - 2.0 pF oss DS GS HIGH FREQUENCY CHARACTERISTICS: 100MHz 400MHz SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS g V =15V, V=0 - 100 - 1,000 S iss DS GS b V =15V, V=0 - 2,500 - 10,000 S iss DS GS g V =15V, V=0 - 75 - 100 S oss DS GS b V =15V, V=0 - 1,000 - 4,000 S oss DS GS g V =15V, V=0 - - 4,000 - S fs DS GS G V =15V, I=5.0mA 18 - 10 - dB ps DS D NF V =15V, I =5.0mA, R=1.0k - 2.0 - 4.0 dB DS D G R2 (4-June 2013)2N4416 2N4416A SILICON N-CHANNEL JFETS TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate 4) Case MARKING: FULL PART NUMBER R2 (4-June 2013) www.centralsemi.com