Product Information

BA682-GS08

BA682-GS08 electronic component of Vishay

Datasheet
Diode PIN Switch 35V Automotive 2-Pin Mini-MELF SOD-80 T/R

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.0357 ea
Line Total: USD 89.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 2500
Multiples : 2500

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BA682-GS08
Vishay

2500 : USD 0.0357

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Frequency Range
Type
Brand
Maximum Series Resistance Minimum If
Factory Pack Quantity :
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BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC 949371 and WEEE 2002/96/EC Applications Band switching in VHF-tuners Mechanical Data Case: MiniMELF Glass case SOD80 Weight: approx. 31 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13 reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7 reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks BA682 V = 35 V, r at I 3 mA = max 0.7 BA682-GS18 or BA682-GS08 Tape and Reel R f F BA683 V = 35 V, r at I 3 mA = max 1.2 BA683-GS18 or BA683-GS08 Tape and Reel R f F Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Reverse voltage V 35 V R Forward continuous current I 100 mA F Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Junction to ambient air on PC board R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 150 C j Storage temperature range T - 55 to +150 C stg Document Number 85530 www.vishay.com Rev. 1.5, 16-Mar-06 1BA682 / BA683 Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage I = 100 mA V 1000 mV F F Reverse current V = 20 V I 50 nA R R Diode capacitance f = 100 MHz, V = 1 V C 1.5 pF R D f = 100 MHz, V = 3 V BA682 C 1.25 pF R D BA683 C 1.2 pF D Differential forward resistance f = 200 MHz, I = 3 mA BA682 r 0.7 F f BA683 r 1.2 f f = 200 MHz, I = 10 mA BA682 r 0.5 F f BA683 r 0.9 f Typical Characteristics T = 25 C, unless otherwise specified amb 100 f = 200 MHz T = 25 C j 10 BA 683 1 BA 682 0.1 0.1 1 10 100 94 9074 I - Forward Current (mA) F Figure 1. Differential Forward Resistance vs. Forward Current 3.0 f = 200 MHz 2.5 T = 25 C j 2.0 1.5 BA 682 1.0 BA 683 0.5 0 0.1 1 10 100 94 9075 V -ReverseVoltage (V) R Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com Document Number 85530 2 Rev. 1.5, 16-Mar-06 r - Differential Forward Resistance () C - Diode Capacitance (pF) f D

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Vishay Thin Film
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