BA979-GS08

BA979, BA979S Vishay Semiconductors RF PIN Diodes - Single in QuadroMELF SOD-80 Features Wide frequency range 10 MHz to 1 GHz AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications 9612009 Current controlled HF resistance in adjustable attenuators Mechanical Data Case: QuadroMELF SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18/10 k per 13 reel (8 mm tape), 10 k/box GS08/2.5 k per 7 reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Type Marking Remarks Z > 5 k BA979 BA979-GS18 or BA979-GS08 - Tape and Reel r Z > 9 k BA979S BA979S-GS18 or BA979S-GS08 - Tape and Reel r Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Reverse voltage 30 V R I Forward continuous current 50 mA F Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit on PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm T Junction temperature 125 C j Storage temperature range T - 55 to + 150 C stg Document Number 85533 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Rev. 1.5, 05-Aug-10 1BA979, BA979S Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage I = 20 mA V 1000 mV F F V = 30 V I Reverse current 50 nA R R Diode capacitance f = 100 MHz, V = 0 C 0.5 pF R D f = 100 MHz, I = 1.5 mA r Differential forward resistance 50 F f Reverse impedance f = 100 MHz, V = 0 BA979 z5k R r z BA979S 9k r I = 10 mA, I = 10 mA Minority carrier lifetime 4s F R Typical Characteristics T = 25 C, unless otherwise specified amb 100 20 - Circuitwith 10 dB Attenuation 0 V =40dBmV 0 10 f = 100 MHzunmodulated 1 T = 25 C - 20 amb 1 - 40 Scattering Limit 0.1 - 60 0.01 - 80 2.0 0 0.4 0.8 1.2 1.6 0 20 40 60 80 95 9735 V - Forward Voltage (V) F 95 9733 f , modulated with 200 kHz, m = 100 % (MHz) 2 Figure 1. Forward Current vs. Forward Voltage Figure 3. Typ. Cross Modulation Distortion vs. Frequency f 2 10 000 1000 100 f > 20 MHz T = 25 C j 10 1 10 0.001 0.01 0.1 1 95 9734 I - Forward Current (mA) F Figure 2. Differential Forward Resistance vs. Forward Current www.vishay.com Document Number 85533 For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 2 Rev. 1.5, 05-Aug-10 r - Differential Forward Resistance () f I- Forward Current (mA) F a - Typical Cross Modulation Distortion (dB)