BAS170WS-HE3-18 Vishay

BAS170WS www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing AEC-Q101 qualified available DESIGN SUPPORT TOOLS click logo to get started Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Models Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS CONFIGURATION BAS170WS-E3-08 or BAS170WS-E3-18 BAS170WS Single 73 Tape and reel BAS170WS-HE3-08 or BAS170WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 70 V RRM Forward continuous current I 70 mA F Surge forward current t < 1 s I 600 mA p FSM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -65 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 10 A (pulsed) V 70 V R (BR) V = 50 V I 0.1 A R R Leakage current V = 70 V I 10 A R R I = 1 mA V 375 410 mV F F Forward voltage I = 10 mA V 705 750 mV F F (1) Forward voltage I = 15 mA V 880 1000 mV F F Diode capacitance V = 0 V, f = 1 MHz C 1.5 2 pF R D Differential forward resistance I = 5 mA, f = 10 kHz r 34 F f Note (1) Pulse test t 300 s p Rev. 2.2, 01-Jun-17 Document Number: 85653 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS170WS www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 0.016 0.25 0.010 1.95 0.077 1.60 0.063 Cathode bar 2.85 0.112 2.50 0.098 Footprint recommendation: 0.8 0.031 0.8 0.031 1.6 0.063 Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 Rev. 2.2, 01-Jun-17 Document Number: 85653 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0 - 8 1.15 0.045 0.8 0.031 0.40 0.016 0.2 0.008 0.20 0.008 0.15 0.006 1.5 0.059 0.10 0.004 1.1 0.043 0.6 0.024 0.1 0.004 max.