BAS385 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS Applications where a very low forward voltage is required Models Available MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13 reel (8 mm tape), 10K/box TR/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS385 V = 30 V BAS385-TR3 or BAS385-TR Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Peak forward surge current t = 10 ms I 5A p FSM Repetitive peak forward current t 1 s I 300 mA p FRM Forward continuous current I 200 mA F Average forward current V = 25 V I 200 mA RWM FAV THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Junction to ambient air R 320 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1mA V 240 mV F F I = 1 mA V 320 mV F F Forward voltage I = 10 mA V 400 mV F F I = 30 mA V 500 mV F F I = 100 mA V 800 mV F F Reserve current V = 25 V, t = 300 s I 2.3 A R p R Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D Rev. 2.2, 02-Jun-17 Document Number: 85504 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS385 www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 200 f = 1 MHz V = 30 V 9 180 R 8 160 7 140 R = 540 kW thJA 6 120 P - Limit R 5 at 100 % V 100 R 4 80 P - Limit 3 60 R at 80 % V R 2 40 1 20 0 0 0.1 1 10 100 25 50 75 100 125 150 15825 V - Reverse Voltage (V) 15822 T - Junction Temperature (C) R j Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 4 - Diode Capacitance vs. Reverse Voltage Junction Temperature 1000 0.71 1.3 1.27 V = V R RRM 0.152 100 0.355 10 2.5 1 24 25 50 75 100 125 150 95 10329 15823 T - Junction Temperature (C) j Fig. 2 - Reverse Current vs. Junction Temperature Fig. 5 - Board for R Definition (in mm) thJA 1000 T = 125 C j 100 T = 25 C j 10 1 0.1 0 0.5 1.0 1.5 V - Forward Voltage (V) 15824 F Fig. 3 - Forward Current vs. Forward Voltage Rev. 2.2, 02-Jun-17 Document Number: 85504 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Reverse Current (A) P - Reverse Power Dissipation (mW) R F R C - Diode Capacitance (pF) D 25 10 9.9