BAV23C-E3-08

BAV23C www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode with common cathode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial 12 grade 18108 1 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAV23C-E3-08 or BAV23C-E3-18 BAV23C Common cathode KT6 Tape and reel BAV23C-HE3-08 or BAV23C-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 200 V R Repetitive peak reverse voltage V 250 V RRM Non-repetitive peak forward current t = 1 s I 9A FSM Non-repetitive peak forward surge current t = 1 s I 0.5 A FSM (1) Maximum average forward rectified current I 200 mA F(AV) (2) Forward continuous current I 400 mA F 625 mA Repetitive peak forward current I FRM (2) Power dissipation P 350 mW tot Notes (1) Measured under pulse conditions pulse time = t 0.3 ms p (2) Device on fiberglass substrate THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 357 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate Rev. 1.5, 13-Feb-18 Document Number: 81902 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV23C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A, t = 300 ms V 250 V R p (BR) I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 200 V I 100 nA R R Reverse current V = 200 V, T = 150 C I 100 A R j R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0 V, f = 1 MHz C 5pF R D I = I = 30 mA, R = 100 F R L Reverse recovery time t 50 ns rr i = 3 mA R 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 T (C) amb Fig. 1 - P - Admissible Power Dissipation vs. Ambient Temperature tot 100 10 1 T = 25 C - prior to surge j 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Test pulse t (s) p Fig. 2 - I - Non-Repetitive Peak Forward Current vs. Pulse Duration - Maximum Admissible Values of Square Pulses FSM Rev. 1.5, 13-Feb-18 Document Number: 81902 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (A) FSM P (mW) tot