IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 400 DS Requirement Available R ( )V = 10 V 0.55 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 36 g COMPLIANT Ruggedness Q (nC) 9.9 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 16 gd and Current Configuration Single Effective C Specified oss Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S Single Transistor Flyback Xfmr. Reset N-Channel MOSFET Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF740APbF Lead (Pb)-free SiHF740A-E3 IRF740A SnPb SiHF740A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C b Single Pulse Avalanche Energy E 630 mJ AS a Repetitive Avalanche Current I 10 A AR a Repetitive Avalanche Energy E 12.5 mJ AR Maximum Power Dissipation T = 25 C P 125 W C D c Peak Diode Recovery dV/dt dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 12.6 mH, R = 25 , I = 10 A (see fig. 12). DD J g AS c. I 10 A, dV/dt 330 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91051 www.vishay.com S11-0508-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF740A, SiHF740A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.48 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - V GS(th) DS GS D 4.0 Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A -- 0.55 DS(on) GS D b Forward Transconductance g V = 50 V, I = 6.0 A 4.9 - - S fs DS D Dynamic Input Capacitance C - 1030 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.7- rss pF V = 0 V, V = 1.0 V, f = 1.0 MHz - 1490 - GS DS Output Capacitance C oss V = 0 V, V = 320 V, f = 1.0 MHz - 52 - GS DS Effective Output Capacitance C V = 0 V, V = 0 V to 320 V - 61 - oss GS DS Total Gate Charge Q -- 36 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.9 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -10 - d(on) Rise Time t -35 - r V = 200 V, I = 10 A, DD D ns b Turn-Off Delay Time t -2R = 10 , R = 19.5 , see fig. 104- d(off) g D Fall Time t -22- f Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 10 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 40 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 240 360 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 C rr Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) Forward Turn-On Time t on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91051 2 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000