The IRFD120PBF is a N-Channel power MOSFET with a Drain source voltage of 100V, a PChannel adhesive, a 1.3A (Ta) Continuous Drain Current, and a 1.3W (Ta) continuous drain/source power dissipation when mounted on a 4-HVMDIP heatsink. The device has ESD protection, an advanced fully-enhanced technology for low RDS(on) and ultra-low gate charge, and its maximum Operating Junction Temperature is 175°C. The device has a drain-source breakdown voltage of 100V (tested at 8.0V) and a maximum gate source voltage of ±12V. It is manufactured by Vishay, a leading supplier of discrete semiconductor products.