Product Information

IRFSL11N50APBF

IRFSL11N50APBF electronic component of Vishay

Datasheet
MOSFET RECOMMENDED ALT 844-IRFSL11N50APBF

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.457 ea
Line Total: USD 2.46

636 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
145 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 50
Multiples : 50
50 : USD 1.664
200 : USD 1.664
500 : USD 1.664
1250 : USD 1.664
2000 : USD 1.664

944 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 4.002
10 : USD 3.358
25 : USD 2.6335
100 : USD 2.3805
250 : USD 2.3115
500 : USD 2.208
1000 : USD 2.0585
2000 : USD 1.9435
5000 : USD 1.863

636 - WHS 3


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 2.457
3 : USD 2.223
10 : USD 1.703
27 : USD 1.612

     
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The Vishay IRFSL11N50APBF is a single N-channel power MOSFET, designed for use in switch-mode and linear power supplies, DC-DC converters, motor control, solid state relays, and other related applications. It is housed in a standard TO-247 package, and is constructed of a high-performance silicon material and has a low gate threshold voltage, making it suitable for low-voltage power control applications. Additionally, the IRFSL11N50APBF has a maximum drain-source on-state resistance (RDS(on)) of 11 mOhm, making it capable of delivering high power with low losses. It is also rated at a drain source voltage (Vds) of 500 V and a continuous drain current (Id) of 11A, making it suitable for DC-DC applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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