LL4148/LL4448/LL914B
Taiwan Semiconductor
Small Signal Product CREAT BY ART
High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface device type mounting
- Matte Tin(Sn) terminal finish
- Pb free version and RoHS compliant
MECHANICAL DATA MINI MELF
- Case : Mini-MELF Package
o
- High temperature soldering guaranteed : 270 C/10s Hermetically Sealed Glass
- Polarity : Indicated by cathode band
- Weight : 31mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted)
A
PARAMETER SYMBOL VALUE UNIT
P
Power Dissipation 500 mW
D
Repetitive Peak Reverse Voltage V 75
V
RRM
Reverse Voltage V 75 V
R
Peak Forward Surge Current (Note 1) I 2
A
FSM
Non-Repetitive Peak Forward Current I 450 mA
FM
I
Mean Forward Current 150 mA
F(AV)
Forward Continuous Current I 150
mA
F
Repetitive Peak Forward Current I 450 mA
FRM
o
Thermal Resistance (Junction to Ambient) (Note 2) R 300
JA C/W
o
Junction and Storage Temperature Range T , T -65 to +175
J STG C
PARAMETER MIN MAX
SYMBOL UNIT
I =100A
100 -
R
V
Reverse Breakdown Voltage V
(BR)
I =5A 75 -
R
Forward Voltage -
-
I =5 mA
LL4448, LL914B 0.62 0.72
F
V V
F
LL4148 I =50 mA - 1
F
I =100 mA
LL4448, LL914B - 1
F
V =20V - 25
nA
R
Reverse Leakage Current I
R
V =75V
- 5 A
R
V =0 f=1.0MHz C
Junction Capacitance -4 pF
R J
Reverse Recovery Time (Note 3) t - 4
ns
rr
Note 1 : Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)
Note 2 : Valid provided that electrodes are kept at ambient temperature
Note 3 : Reverse recovery test conditions : I =I =10mA, R =100, I =1mA
F R L RR
Document Number: DS_S1408022 Version: I14LL4148/LL4448/LL914B
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25 unless otherwise noted)
Fig. 1 Typical Forward Characteristics
Fig. 2 Reverse Current VS. Reverse Voltage
1500 100
T =25 T =25
A A
1200
10
900
1
600
0.1
300
0
0.01
0.001 0.01 0.1 1 10 100 1000
0 20 40 60 80 100 120
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 Admissible Power Dissipation Curve Fig. 4 Typical Junction Capacitance
1.5
600
500
1.2
400
0.9
300
0.6
200
0.3
100
0 0.0
0 5 10 15 20 25 30
0 50 100 150 200
Reverse Voltage (V)
o
Ambient Temperature ( C)
Fig. 5 Forward Resistance VS. Forward Current
10000
1000
100
10
1
0.01 0.1 1 10 100
Forward Current (mA)
Document Number: DS_S1408022 Version: I14
Dynamic Forward Resistance (Ohm) Power Dissipation (mW)
Instantaneous Forward Current (mA)
Reverse Current (A)
Junction Capacitance (pF)