LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges This diode is also available in the DO-35 (DO-204AH) case with type designation BAT46 and in the SOD-123 case with type designation BAT46W-V DESIGN SUPPORT TOOLS click logo to get started AEC-Q101 qualified Material categorization: for definitions of compliance Models Available please see www.vishay.com/doc 99912 MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS LL46 LL46-GS18 or LL46-GS08 Single - Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM (1) Forward continuous current I 150 mA F (1) Repetitive peak forward current t < 1 s, < 0.5 I 350 mA p FRM (1) Surge forward current t = 10 ms I 750 mA p FSM (1) Power dissipation T = 80 C P 200 mW amb tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Ambient operating temperature range T -55 to +125 C amb Storage temperature range T -65 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.7, 01-Jun-17 Document Number: 85673 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000LL46 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A (pulsed) V 100 V R (BR) V = 1.5 V I 0.5 A R R V = 1.5 V, T = 60 C I 5A R j R V = 10 V I 0.8 A R R V = 10 V, T = 60 C I 7.5 A R j R (1) Leakage current V = 50 V I 2A R R V = 50 V, T = 60 C I 15 A R j R V = 75 V I 5A R R V = 75 V, T = 60 C I 20 A R j R I = 0.1 mA V 250 mV F F (1) Forward voltage I = 10 mA V 450 mV F F I = 250 mA V 1000 mV F F V = 0 V, f = 1 MHz C 10 pF R D Diode capacitance V = 1 V, f = 1 MHz C 6pF R D Note (1) Pulse test t < 300 s, < 2 % p TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 250 1000 T = 60 C j 200 100 150 10 25 C 100 1 50 0.1 0 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 T - Ambient Temperature (C) amb 18546 V - Forward Voltage (V) F 20081 Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 100 10 T = 60 C j 1 T = 25 C j 0.1 0.01 020 40 60 80 100 18547 V - Reverse Voltage (V) R Fig. 2 - Typical Reverse Characteristics Rev. 1.7, 01-Jun-17 Document Number: 85673 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Leakage Current (A) R I - Forward Current (mA) F P - Power Dissipation (mW) tot