Product Information

1N4148W

1N4148W electronic component of Taiwan Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching Switching diode 400 mW

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0196 ea
Line Total: USD 58.8

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 1

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1N4148W
Taiwan Semiconductor

3000 : USD 0.0196
15000 : USD 0.0177
36000 : USD 0.0161

     
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RoHS - XON
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1N4148W, 1N4448W 1N4148W, 1N4448W Surface Mount Small Signal Diodes Kleinsignal-Dioden fr die Oberflchenmontage Version 2015-07-16 Power dissipation Verlustleistung 400 mW 0.1 2.7 Repetitive peak reverse voltage 75 V eriodische Spitzensperrspannung Plastic case Kunststoffgehuse ~SOD-123 0.2 3.8 Weight approx. Gewicht ca. 0.01 g Type Plastic material has UL classification 94V-0 Code Gehusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Dimensions - Mae mm Standard Lieferform gegurtet auf Rolle Maximum ratings (T = 25C) Grenzwerte (T = 25C) A A 1N4148W, 1N4448W 1 Power dissipation Verlustleistung P 400 mW ) tot 1 Max. average forward current Dauergrenzstrom (dc) I 150 mA ) FAV 1 Repetitive peak forward current Periodischer Spitzenstrom I 300 mA ) FRM 1 Non repetitive peak forward surge current t 1 s I 500 mA ) p FSM Stostrom-Grenzwert t 1 s I 2 A p FSM Repetitive peak reverse voltage Periodische Spitzensperrspannung V 75 V RRM Non repetitive peak reverse voltage Stospitzensperrspannung V 100 V RSM Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur T -55+150C S Characteristics (T = 25C) Kennwerte (T = 25C) j j Forward voltage 1N4148W I = 10 mA V < 1.0 V F F Durchlass-Spannung 1N4448W I = 5 mA V 0.62...0.72 V F F I = 100 mA 1 V F F 2 Leakage current Sperrstrom ) V = 20 V I < 25 nA R R V = 75 V I 5 A R R 2 Leakage current Sperrstrom, T = 125C ) V = 20 V I < 30 A j R R V = 75 V I 50 A R R Max. junction capacitance Max. Sperrschichtkapazitt C 4 pF T V = 0 V, f = 1 MHz R Reverse recovery time Sperrverzug t rr < 4 ns I = 10 mA ber/through I = 10 mA bis/to I = 1 mA F R R Thermal resistance junction to ambient air 1 R < 400 K/W ) thA Wrmewiderstand Sperrschicht umgebende Luft 2 1 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss 2 Tested with pulses tp = 300 s, duty cycle 2% Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% Diotec Semiconductor AG 1N4148W, 1N4448W 1 Marking Stempelung 1N4148W = W1 / T4 / T6 ) 1 1N4448W = T5 / W1 ) These diodes are also available in other case styles DO-35 = 1N4148 Diese Dioden sind auch in anderen Gehuseformen lieferbar MiniMELF = LL4148 Q-MiniMELF = LS4148 Q-MicroMelf = MCL4148 ~SOD-323 = 1N4148WS 1 120 % A 100 -1 10 80 T = 125C j -2 10 60 40 T = 25C j -3 10 20 I F P tot -4 0 10 V 0 T 50 100 150 C 0 0.4 0.6 0.8 1.0 V 1.4 F A 1 Forward characteristics (typical values) Power dissipation versus ambient temperature ) 1 Durchlasskennlinien (typische Werte) Verlustleistung in Abh. von d. Umgebungstemp. ) 1 Alternatively used. The complete part number is given on the package label. Alternativ verwendet. Die vollstndige Artikel-Nr. ist auf dem Verpackungsetikett angegeben. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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