X-On Electronics has gained recognition as a prominent supplier of SI1036X-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI1036X-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI1036X-T1-GE3 Vishay

SI1036X-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI1036X-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 30V Vds 8V Vgs SC89-6
Datasheet: SI1036X-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.46 ea
Line Total: USD 0.46

Availability - 49591
Ships to you between
Tue. 11 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
87 - WHS 1


Ships to you between
Wed. 12 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.261
10 : USD 0.2165
30 : USD 0.1938
100 : USD 0.172
500 : USD 0.1591
1000 : USD 0.1522

49591 - WHS 2


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.46
10 : USD 0.3588
100 : USD 0.2001
1000 : USD 0.1357
3000 : USD 0.1184
9000 : USD 0.115
24000 : USD 0.1127

     
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We are delighted to provide the SI1036X-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1036X-T1-GE3 and other electronic components in the MOSFET category and beyond.

Si1036X www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R tested g 0.540 at V = 4.5 V 0.5 GS Gate-source ESD protected: 1000 V 0.600 at V = 2.5 V 0.2 GS 30 0.72 nC Material categorization: 0.700 at V = 1.8 V 0.2 GS For definitions of compliance please see 1.100 at V = 1.5 V 0.05 GS www.vishay.com/doc 99912 APPLICATIONS SC-89 Dual (6 leads) S Load switch 2 4 G High speed switching 2 5 D 1 DC/DC converters / boost converters 6 For smart phones, tablet PCs and mobile computing D D 2 1 3 D 2 2 G 1 1 G S G 2 1 1 Top View Marking Code: B Ordering Information: Si1036X-T1-GE3 (Lead (Pb)-free and Halogen-free) S S 2 1 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 8 GS a,b T = 25 C 0.61 A a Continuous Drain Current (T = 150 C) I J D a,b T = 70 C 0.49 A A Pulsed Drain Current (t = 100 s) I 2 DM a,b Continuous Source-Drain Diode Current T = 25 C I 0.18 A A S a,b T = 25 C 0.22 A a Maximum Power Dissipation P W D a,b T = 70 C 0.14 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT t 5 s 470 565 b Maximum Junction-to-Ambient R C/W thJA Steady State 560 675 Notes a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. S14-0147-Rev. A, 27-Jan-14 Document Number: 62932 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1036X www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - V DS GS D V Temperature Coefficient V /T -29 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --1.8- GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V - - 30 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = 30 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I DSS V = 30 V, V = 0 V, T = 85 C - - 3 DS GS J a On-State Drain Current I V = 5 V, V = 4.5 V 2 - - A D(on) DS GS V = 4.5 V, I = 0.5 A - 0.450 0.540 GS D V = 2.5 V, I = 0.2 A - 0.500 0.600 GS D a Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 0.2 A - 0.560 0.700 GS D V = 1.5 V, I = 0.05 A - 0.647 1.100 GS D Forward Transconductance g V = 15 V, I = 0.5 A - 7.5 - S fs DS D b Dynamic Input Capacitance C -36 - iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz -9 - pF oss DS GS Reverse Transfer Capacitance C -5 - rss V = 15 V, V = 8 V, I = 0.5 A - 1.2 2 DS GS D Total Gate Charge Q g - 0.72 1.2 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 0.5 A -0.1 - gs DS GS D Gate-Drain Charge Q -0.16- gd Gate Resistance R f = 1 MHz 2.4 12.2 24.4 g Turn-On Delay Time t -6 15 d(on) Rise Time t -13 24 r V = 15 V, R = 37.5 DD L ns I 0.4 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -2030 d(off) Fall Time t -11 20 f Drain-Source Body Diode Characteristics a Pulse Diode Forward Current I -- 2 A SM Body Diode Voltage V I = 0.5 A - 0.8 1.2 V SD S Body Diode Reverse Recovery Time t - 8 15 ns rr Body Diode Reverse Recovery Charge Q -2 4 nC rr I = 0.4 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t -4 - a ns Reverse Recovery Rise Time t -4 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0147-Rev. A, 27-Jan-14 Document Number: 62932 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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