Si1065X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) Q (Typ.) 100 % R Tested DS DS(on) D g g 0.156 at V = - 4.5 V Material categorization: 1.18 GS For definitions of compliance please see 0.190 at V = - 2.5V - 12 1.07 6.7 nC GS www.vishay.com/doc 99912 0.245 at V = - 1.8V 0.49 GS APPLICATIONS Load Switch for Portable Devices SC-89 (3-LEADS) S D 1 6 D Marking Code W XX 5 D 2 D Lot Traceability and Date Code G G 3 4 S Part Code Top View D P-Channel MOSFET Ordering Information: Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 12 DS V V Gate-Source Voltage 8 GS b, c T = 25 C - 1.18 A Continuous Drain Current (T = 150 C) I J D b, c T = 70 C A - 0.94 A I - 8 Pulsed Drain Current DM b, c Continuous Source-Drain Diode Current T = 25 C I - 0.2 A S b, c T = 25 C A 0.236 a P W Maximum Power Dissipation D b, c T = 70 C A 0.151 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 a, b R C/W Maximum Junction-to-Ambient Steady State thJA 540 650 State Notes: a. Maximum under steady state conditions is 650 C/W. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. Document Number: 74320 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-1619-Rev. D, 09-Jul-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si1065X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test ConditionsMin.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 8.47 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.33 GS(th) GS(th) J V V = V , I = - 250 A - 0.45 - 0.95 V Gate-Source Threshold Voltage GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 nA DS GS Zero Gate Voltage Drain Current I DSS V = - 12 V, V = 0 V, T = 85 C - 10 A DS GS J a I V = 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 1.18 A 0.108 0.156 GS D a R V = - 2.5 V, I = - 1.07 A 0.131 0.190 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 0.49 A 0.158 0.245 GS D g V = - 6 V, I = - 1.18 A Forward Transconductance 5.18 S fs DS D b Dynamic C Input Capacitance 480 iss Output Capacitance C V = - 6 V, V = 0 V, f = 1 MHz 190 pF oss DS GS Reverse Transfer Capacitance C 145 rss V = - 6 V, V = - 5 V, I = - 1.18 A 7.2 10.8 DS GS D Q Total Gate Charge g 6.7 10.1 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 1.18 0.84 gs DS GS D Q Gate-Drain Charge 2.7 gd R Gate Resistance f = 1 MHz 10 15 g t Turn-On Delay Time 13 19.5 d(on) t Rise Time V = - 6 V, R = 6.32 27 40.5 r DD L ns I - 0.95 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 45 67.5 d(off) t Fall Time 27 40.5 f Drain-Source Body Diode Characteristics a I 8A Pulse Diode Forward Current SM V I = - 0.63 A Body Diode Voltage 0.8 1.2 V SD S t Body Diode Reverse Recovery Time 29.2 44 nC rr Q Body Diode Reverse Recovery Charge 10.22 15.3 rr I = - 0.7 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 13.7 ns a t Reverse Recovery Rise Time 15.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74320 For technical questions, contact: pmostechsupport vishay.com 2 S12-1619-Rev. D, 09-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000