Si1067X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.150 at V = - 4.5 V 1.06 GS TrenchFET Power MOSFET - 20 0.166 at V = - 2.5V 1.0 6.0 GS 100 % R Tested g 0.214 at V = - 1.8V 0.49 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS Load Switch for Portable Devices SC-89 (6-LEADS) S Marking Code D 1 6 D X XX Lot Traceability 5 G D 2 D and Date Code Part Code G 3 4 S D Top View P-Channel MOSFET Ordering Information: Si1067X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS b, c T = 25 C - 1.06 A a I Continuous Drain Current (T = 150 C) D J b, c T = 70 C A - 0.85 A I Pulsed Drain Current - 8 DM b, c T = 25 C I Continuous Source-Drain Diode Current - 0.2 A S b, c T = 25 C A 0.236 a P W Maximum Power Dissipation D b, c T = 70 C A 0.151 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 a, b R C/W Maximum Junction-to-Ambient thJA Steady State 540 650 Notes: a. Maximum under steady state conditions is 650 C/W. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. Document Number: 74322 www.vishay.com S10-2542-Rev. D, 08-Nov-10 1 Y Y Si1067X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test ConditionsMin.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 32.07 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.02 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.45 - 0.95 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 85 C - 10 DS GS J a I V = 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 1.06 A 0.125 0.150 GS D a R V = - 2.5 V, I = - 1.0 A 0.138 0.166 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 0.49 A 0.165 0.214 GS D g V = - 10 V, I = - 1.06 A Forward Transconductance 4.0 S fs DS D b Dynamic C Input Capacitance 375 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 82 pF oss DS GS Reverse Transfer Capacitance C 62 rss V = - 10 V, V = - 5 V, I = - 1.06 A 6.5 9.3 DS GS D Q Total Gate Charge g 6.0 9.1 nC Q V = - 10 V, V = - 4.5 V, I = - 1.06 A Gate-Source Charge 0.76 gs DS GS D Q Gate-Drain Charge 2.23 gd Gate Resistance R f = 1 MHz 8.8 13.2 g t Turn-On Delay Time 14 21 d(on) t Rise Time V = - 10 V, R = 19.74 22 33 r DD L ns I - 0.76 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t D GEN g 48 72 d(off) t Fall Time 17 25.5 f Drain-Source Body Diode Characteristics a I 8A Pulse Diode Forward Current SM V I = - 0.63 A Body Diode Voltage 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 12.8 19.2 nC rr Q Body Diode Reverse Recovery Charge 4.5 6.8 rr I = - 0.7 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 7.3 ns a t Reverse Recovery Rise Time 5.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74322 2 S10-2542-Rev. D, 08-Nov-10