New Product Si4056DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g 100 % R and UIS Tested g 0.023 at V = 10 V 11.1 Material categorization: GS For definitions of compliance please see 100 0.024 at V = 7.5 V 10.8 9.7 nC GS www.vishay.com/doc 99912 0.031 at V = 4.5 V 9.5 GS APPLICATIONS SO-8 D DC/DC Primary Side Switch SD 1 8 Telecom/Server Industrial SD 2 7 Synchronous Rectification SD 3 6 G GD 4 5 Top View S Ordering Information: N-Channel MOSFET Si4056DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V V Gate-Source Voltage 20 GS T = 25 C 11.1 C T = 70 C 8.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 7.3 A b, c T = 70 C 5.8 A A I Pulsed Drain Current (t = 300 s) 70 DM T = 25 C 5.1 C Continuous Source-Drain Diode Current I S b, c = 25 C 2.2 T A Single Pulse Avalanche Current I 15 AS L = 0.1 mH Avalanche Energy E 11.2 mJ AS T = 25 C 5.7 C T = 70 C 3.6 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 10 s R 35 50 thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 18 22 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 C/W. Document Number: 62662 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1136-Rev. A, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product Si4056DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 67 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.5 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V 10 V, I = 15 A 0.017 0.023 GS D a R V 7.5 V, I = 12 A 0.018 0.024 Drain-Source On-State Resistance DS(on) GS D V 4.5 V, I = 10 A 0.022 0.031 GS D a g V = 15 V, I = 15 A 26 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 900 iss Output Capacitance C V = 50 V, V = 0 V, f = 1 MHz 340 pF oss DS GS C Reverse Transfer Capacitance 31 rss V = 50 V, V = 10 V, I = 10 A 19.6 29.5 DS GS D Total Gate Charge Q g 9.7 15 Q Gate-Source Charge V = 50 V, V = 4.5 V, I = 10 A 2.8 gs nC DS GS D Gate-Drain Charge Q 4.3 gd Q V = 50 V, V = 0 V Output Charge 26.2 40 oss DS GS R Gate Resistance f = 1 MHz 0.2 0.85 1.7 g t Turn-On Delay Time 13 26 d(on) t Rise Time V = 50 V, R = 5 14 28 r DD L I 10 A, V = 7.5 V, R = 1 t Turn-Off Delay Time D GEN g 19 38 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 11 22 d(on) t Rise Time V = 50 V, R = 5 10 20 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 20 40 D GEN g d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.1 S C A a I 70 Pulse Diode Forward Current SM V I = 4 A Body Diode Voltage 0.77 1.1 V SD S t Body Diode Reverse Recovery Time 34 65 ns rr Q Body Diode Reverse Recovery Charge 34 65 nC rr I = 5 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62662 2 S12-1136-Rev. A, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000