SI4401DDY-T1-GE3 Vishay

SI4401DDY-T1-GE3 electronic component of Vishay
SI4401DDY-T1-GE3 Vishay
SI4401DDY-T1-GE3 MOSFETs
SI4401DDY-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4401DDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4401DDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4401DDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 40 V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC
Datasheet: SI4401DDY-T1-GE3 Datasheet (PDF)
Price (USD)
1: USD 0.8288 ea
Line Total: USD 0.83 
Availability : 2283
  
Ship by Mon. 18 Aug to Thu. 21 Aug
QtyUnit Price
1$ 0.8288
10$ 0.641
30$ 0.561
100$ 0.3134
500$ 0.2835
1000$ 0.2649

Availability 2425
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3813
5000$ 0.375
7500$ 0.3687
10000$ 0.3687
12500$ 0.3625


Availability 2283
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8288
10$ 0.641
30$ 0.561
100$ 0.3134
500$ 0.2835
1000$ 0.2649


Availability 807
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.414
10$ 0.9436
43$ 0.4382
117$ 0.4144
5000$ 0.399

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Category
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Notes:- Show Stocked Products With Similar Attributes.

SI4401DDY-T1-GE3 Alternative Parts

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We are delighted to provide the SI4401DDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4401DDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The VISHAY SI4401DDY-T1-GE3 is an 8-lead P-Channel metal oxide semiconductor field effect transistor (MOSFET) used in a variety of switching applications. This transistor is a type of power semiconductor, allowing high current to be switched on and off quickly and efficiently. The maximum drain source voltage (VDS) is 40V and maximum continuous drain current (ID) is 16A while in the P-channel configuration. It has a maximum drain-source on-resistance of 7.9 mW, a fast switching speed, low gate charge and an improved figure of merit. It also offers an improved immunity to latch-up, protection against body-diode dV/dt, built-in ESD protection and a wide temperature range of -55°C to 150°C. This MOSFET is manufactured in a 8-lead SOIC surface mount package allowing for a higher power density and improved thermal and electrical performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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