Si4100DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.063 at V = 10 V 6.8 GS TrenchFET Power MOSFET 100 9 nC 100 % UIS Tested 0.084 at V = 6 V 5.8 GS APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D 1 8 D S D 2 7 D S 3 6 G D 4 5 G Top View S Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free) Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS 6.8 T = 25 C C T = 70 C 5.4 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 4.4 a, b T = 70 C A 3.5 A I Pulsed Drain Current 20 DM T = 25 C 5 C I Continuous Source-Drain Diode Current S a, b T = 25 C A 2.1 I Single Avalanche Current 19 AS L = 0.1 mH E mJ Single Avalanche Energy 18 AS T = 25 C 6 C T = 70 C 3.8 C P Maximum Power Dissipation W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, c R t 10 s 37 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 C/W. d. T = 25 C. C Document Number: 69251 www.vishay.com S09-0220-Rev. B, 09-Feb-09 1Si4100DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 V DS GS D V Temperature Coefficient V /T 120 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 9 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 24.5V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 4.4 A 0.051 0.063 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 3.8 A 0.069 0.084 GS D a g V = 15 V, I = 4.4 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 600 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 90 pF oss DS GS C Reverse Transfer Capacitance 50 rss V = 50 V, V = 10 V, I = 4.4 A 13.5 20 DS GS D Q Total Gate Charge g 9 13.5 nC Q Gate-Source Charge V = 50 V, V = 6 V, I = 4.4 A 3 gs DS GS D Q Gate-Drain Charge 4.6 gd Gate Resistance R f = 1 MHz 1 g t Turn-On Delay Time 15 25 d(on) Rise Time t 12 20 V = 50 V, R = 14.3 r DD L I 3.5 A, V = 6 V, R = 1 t Turn-Off Delay Time D GEN g 12 20 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 12 20 V = 50 V, R = 14.3 r DD L I 3.5 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5 S C A I Pulse Diode Forward Current 20 SM V I = 3.5 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 45 70 ns rr Q Body Diode Reverse Recovery Charge 80 120 nC rr I = 3.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 33 a ns t Reverse Recovery Rise Time 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69251 2 S09-0220-Rev. B, 09-Feb-09