Si4425BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition 0.012 at V = - 10 V - 11.4 GS TrenchFET Power MOSFET - 30 0.019 at V = - 4.5 V - 9.1 GS Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S S 1 8 D S D 2 7 G S D 3 6 G D 4 5 Top View D Ordering Information: Si4425BDY-T1-E3 (Lead (Pb)-free) Si4425BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C - 11.4 - 8.8 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 9.1 - 7.0 A A I Pulsed Drain Current - 50 DM a I - 2.1 - 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 70 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 15 18 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72000 www.vishay.com S09-0767-Rev. E, 04-May-09 1Si4425BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 5 V, V = - 10 V - 50 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 11.4 A 0.010 0.012 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 9.1 A 0.015 0.019 GS D a g V = - 15 V, I = - 11.4 A 29 S Forward Transconductance fs DS D a V I = - 2.5 A, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 64 100 g Q V = - 15 V, V = - 10 V, I = - 11.4 A Gate-Source Charge 11 nC gs DS GS D Gate-Drain Charge Q 17 gd t Turn-On Delay Time 15 25 d(on) Rise Time t 13 20 V = - 15 V, R = 15 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 100 150 ns d(off) Fall Time t 53 80 f t I = - 2.5 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 41 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 5 V GS 40 40 4 V 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 0 0 0 1234 5 0 1234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 72000 2 S09-0767-Rev. E, 04-May-09 I - Drain Current (A) D I - Drain Current (A) D