Si4425FDY www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES SO-8 Single D TrenchFET Gen IV p-channel power MOSFET D 5 D 6 100% R tested g 7 D Material categorization:, 8 for definitions of compliance please see www.vishay.com/doc 99912 4 APPLICATIONS S G 33 Adapter switch SS 22 SS 11 Battery management S Top View Circuit protection G PRODUCT SUMMARY Load switch V (V) -30 DS Motor drive control R max. ( ) at V = -10 V 0.0095 DS(on) GS R max. ( ) at V = -4.5 V 0.0160 P-Channel MOSFET DS(on) GS D Q typ. (nC) 13 g a I (A) -18.3 D Configuration Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4425FDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V -20 / +16 GS T = 25 C -18.3 C T = 70 C -14.7 C Continuous drain current (T = 150 C) I J D b, c T =25 C -12.7 A b, c T = 70 C -10.2 A A Pulsed drain current (t = 100 s) I -70 DM T = 25 C -4 C Continuous source-drain diode current I S b, c T = 70 C -1.9 A Single pulse avalanche current I 15 AS L = 0.1 mH Single pulse avalanche energy E 11.25 mJ AS T = 25 C 4.8 C T = 70 C 3.1 C Maximum power dissipation P W D b, c T = 25 C 2.3 A b, c T = 70 C 1.5 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e 260 Soldering recommendations (peak temperature) THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 10 s R 42 53 thJA C/W Maximum junction-to-case (drain) Steady state R 21 26 thJF Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. Maximum under steady state conditions is 90 C/W e. T = 25 C C S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si4425FDY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --13 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -1 - -2.2 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = -20 V / +16 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V -5 V, V = 10 V -10 - - A D(on) DS GS V = -10 V, I = -10 A - 0.0077 0.0095 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -10 A - 0.0127 0.0160 GS D a Forward transconductance g V = -10 V, I = -10 A - 47 - S fs DS D b Dynamic Input capacitance C - 1620 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz - 250 - pF DS GS oss Reverse transfer capacitance C -56 - rss V = -15 V, V = -10 V, I = -10 A - 27 41 DS GS D Total gate charge Q g V = -15 V, V = -4.5 V, I = -10 A - 13 20 DS GS D nC Gate-source charge Q -5.4 - gs V = -15 V, V = -4.5 V, I = -10 A DS GS D Gate-drain charge Q -4.3 - gd Gate resistance R f = 1 MHz 4 10 17 g Turn-on delay time t -22 44 d(on) Rise time t -48 96 r V = -15 V, R = 1.5 , I -10 A, DD L D V = -4.5 V, R = 1 Turn-off delay time t GEN g -29 58 d(off) Fall time t -23 46 f ns Turn-on delay time t -8 18 d(on) Rise time t -6 12 V = -15 V, R = 1.5 , I -10 A, r DD L D V = -10 V, R = 1 Turn-off delay time t GEN g -42 84 d(off) Fall time t -22 44 f Drain-Source Body Diode Characteristics T = 25 C Continuous source-drain diode current I -- -4 S C A Pulse diode forward current I -- -70 SM I = -5 A, V = 0 V Body diode voltage V - -0.78 -1.2 V SD S GS Body diode reverse recovery time t -26 52 ns rr Body diode reverse recovery charge Q -12 24 nC rr I = -10 A, di/dt = 100 A/s, F T = 25 C J Reverse recovery fall time t -12 - a ns Reverse recovery rise time t -14 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0330-Rev. A, 08-Apr-2019 Document Number: 77095 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000