SI4447ADY-T1-GE3 Vishay

SI4447ADY-T1-GE3 electronic component of Vishay
SI4447ADY-T1-GE3 Vishay
SI4447ADY-T1-GE3 MOSFETs
SI4447ADY-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4447ADY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4447ADY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4447ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: 40V 7.2A 45mO@5A,10V 4.2W P Channel SO-8 MOSFETs ROHS
RFiD transceiver IC with selectable data rate from 768bps to 300kbps.
Datasheet: SI4447ADY-T1-GE3 Datasheet (PDF)
Price (USD)
1: USD 1.022 ea
Line Total: USD 1.02 
Availability : 1616
  
Ship by Wed. 24 Sep to Fri. 26 Sep
QtyUnit Price
1$ 1.022
10$ 0.714
43$ 0.4578
116$ 0.4326
250$ 0.4312

Availability 1616
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.022
10$ 0.714
43$ 0.4578
116$ 0.4326
250$ 0.4312

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4447ADY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4447ADY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4447ADY-T1-GE3 is a part of Vishay's Automotive, Discrete, and Logic portfolio, designed to support various precision applications. It is a low-noise P-channel enhancement-mode (E-MOSFET) transistor that has a maximum power dissipation of 1W. The device has an RDS(on) max of 0.7 Ohm, a VGS(max) of -30V, and an Id of -30A. It is housed in an SOT-223 case and is RoHS compliant. This device is ideal for use in power FET applications, battery management and power MOSFET switch applications where robustness and precision are required.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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