X-On Electronics has gained recognition as a prominent supplier of SI4447ADY-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI4447ADY-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI4447ADY-T1-GE3 Vishay

SI4447ADY-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI4447ADY-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: 40V 7.2A 45mO@5A,10V 4.2W P Channel SO-8 MOSFETs ROHS
RFiD transceiver IC with selectable data rate from 768bps to 300kbps.
Datasheet: SI4447ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5543 ea
Line Total: USD 0.55

Availability - 27344
Ships to you between
Mon. 10 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

SI4447ADY-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
29100 - WHS 1


Ships to you between Tue. 04 Jun to Mon. 10 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.2311

27344 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5543
10 : USD 0.4784
100 : USD 0.3392
500 : USD 0.2921
1000 : USD 0.2553
2500 : USD 0.2265
5000 : USD 0.2242
10000 : USD 0.2174
25000 : USD 0.215

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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We are delighted to provide the SI4447ADY-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4447ADY-T1-GE3 and other electronic components in the MOSFET category and beyond.

Additional Infomation About Product

The SI4447ADY-T1-GE3 is a part of Vishay's Automotive, Discrete, and Logic portfolio, designed to support various precision applications. It is a low-noise P-channel enhancement-mode (E-MOSFET) transistor that has a maximum power dissipation of 1W. The device has an RDS(on) max of 0.7 Ohm, a VGS(max) of -30V, and an Id of -30A. It is housed in an SOT-223 case and is RoHS compliant. This device is ideal for use in power FET applications, battery management and power MOSFET switch applications where robustness and precision are required.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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