Si4456DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Available 0.0038 at V = 10 V 33 TrenchFET Gen II Power MOSFET GS 40 37.5 nC 100 % R and UIS Tested 0.0045 at V = 4.5 V 31 g GS APPLICATIONS Secondary Rectification Point of Load SO-8 D SD 1 8 SD 2 7 SD 3 6 GD G 4 5 Top View S Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free) Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 40 DS V Gate-Source Voltage V 20 GS T = 25 C 33 C T = 70 C 27 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 23 A b, c T = 70 C 18 A A I 70 Pulsed Drain Current DM T = 25 C 7.0 C I Continuous Source-Drain Diode Current S b, c T = 25 C 3.0 A I Avalanche Current 40 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 80 AS T = 25 C 7.8 C T = 70 C 5.0 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 29 35 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) R 13 16 Steady State thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 80 C/W. Document Number: 73852 www.vishay.com S09-0138-Rev. B, 02-Feb-09 1Si4456DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 54 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 7 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V = 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0031 0.0038 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.0037 0.0045 GS D a g V = 15 V, I = 20 A 110 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5670 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 621 pF oss DS GS C Reverse Transfer Capacitance 287 rss V = 20 V, V = 10 V, I = 20 A 81 122 DS GS D Q Total Gate Charge g 37.5 57 nC Q V = 20 V, V = 4.5 V, I = 20 A Gate-Source Charge 17 gs DS GS D Q Gate-Drain Charge 11 gd R Gate Resistance f = 1 MHz 1.05 1.6 g t Turn-On Delay Time 145 220 d(on) t V = 20 V, R = 2 Rise Time 208 320 r DD L t I 10 A, V = 4.5 V, R = 1 Turn-Off DelayTime 56 85 d(off) D GEN g t Fall Time 15 23 f ns t Turn-On Delay Time 21 32 d(on) t V = 20 V, R = 2 Rise Time 58 90 r DD L t I 10 A, V = 10 V, R = 1 Turn-Off DelayTime 55 85 d(off) D GEN g t Fall Time 815 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 7 S C A a I 70 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.71 1.1 V SD S t Body Diode Reverse Recovery Time 38 60 ns rr Q Body Diode Reverse Recovery Charge 42 65 nC rr I = 13 A, dI/dt = 100 A/s, T = 25 C F J t ns Reverse Recovery Fall Time 21 a t Reverse Recovery Rise Time 17 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73852 2 S09-0138-Rev. B, 02-Feb-09