Si4451DY Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.00825 at V = - 4.5 V - 14 GS TrenchFET Power MOSFET - 12 0.01025 at V = - 2.5 V - 13 GS Compliant to RoHS Directive 2002/95/EC 0.013 at V = - 1.8 V - 12 GS APPLICATIONS Load Switch Battery Switch S SO-8 SD 1 8 G S D 2 7 SD3 6 G D 4 5 Top View D Ordering Information: Si4451DY-T1-E3 (Lead (Pb)-free) Si4451DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 14 - 10 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 11 - 8 A A I Pulsed Drain Current - 40 DM a I - 2.7 - 1.35 Continuous Source Current (Diode Conduction) S T = 25 C 3.0 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.9 0.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 42 a R Maximum Junction-to-Ambient thJA Steady State 70 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72115 www.vishay.com S09-0705-Rev. C, 27-Apr-09 1Si4451DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 850 A Gate Threshold Voltage - 0.40 - 0.8 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 5 DS GS J a I V = - 5 V, V = - 4.5 V - 30 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 14 A 0.0065 0.00825 GS D a R V = - 2.5 V, I = - 13 A 0.008 0.01025 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 12 A 0.0105 0.013 GS D a g V = - 10 V, I = - 14 A 55 S Forward Transconductance fs DS D a V I = - 2.7 A, V = 0 V - 0.6 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 81 120 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 14 A 8.6 nC gs DS GS D Q Gate-Drain Charge 23.4 gd Gate Resistance R 3.0 g t Turn-On Delay Time 55 85 d(on) Rise Time t 125 190 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 315 480 ns d(off) Fall Time t 235 360 f t I = - 2.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 185 300 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 V = 5 thru 2 V GS 32 32 1.5 V 24 24 16 16 T = 125 C C 8 8 25 C - 55 C 0 0 0 1234 5 0.0 0.4 0.8 1.2 1.6 2.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72115 2 S09-0705-Rev. C, 27-Apr-09 I - Drain Current (A) D I - Drain Current (A) D