Si4463BDY Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.011 at V = - 10 V - 13.7 GS TrenchFET Power MOSFETs - 20 0.014 at V = - 4.5 V - 12.3 GS 0.020 at V = - 2.5 V - 10.3 GS S SO-8 SD1 8 G S D 2 7 SD3 6 G D 4 5 Top View D Ordering Information: Si4463BDY-T1-E3 (Lead (Pb)-free) Si4463BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 20 DS V Gate-Source Voltage V 12 GS T = 25 C - 13.7 - 9.8 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 11.1 - 7.9 A A I Pulsed Drain Current - 50 DM a I - 2.7 - 1.36 Continuous Source Current (Diode Conduction) S T = 25 C 3.0 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.9 0.95 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 35 42 a R Maximum Junction-to-Ambient thJA Steady State 70 84 C/W Maximum Junction-to-Foot (Drain) Steady State R 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72789 www.vishay.com S09-0393-Rev. C, 09-Mar-09 1Si4463BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 70 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 13.7 A 0.0085 0.011 GS D a R V = - 4.5 V, I = - 12.3 A 0.010 0.014 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 5 A 0.015 0.020 GS D a g V = - 10 V, I = - 13.7 A 44 S Forward Transconductance fs DS D a V I = - 2.7 A, V = 0 V - 0.7 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 37 56 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 13.7 A 8.7 nC gs DS GS D Q Gate-Drain Charge 11 gd Gate Resistance R f = 1 MHz 2.7 g t Turn-On Delay Time 35 55 d(on) Rise Time t 60 90 V = - 10 V, R = 10 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN g 115 170 ns d(off) Fall Time t 75 115 f t I = - 2.3 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 50 75 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 thru 2.5 V GS 40 40 30 30 2 V 20 20 T = 125 C C 10 10 1.5 V 25 C - 55 C 0 0 0 1234 5 0.0 0.5 1.0 1.5 2.0 2.5 V Drain-to-Source Voltage (V) DS V Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72789 2 S09-0393-Rev. C, 09-Mar-09 I Drain Current (A) D I Drain Current (A) D