Si4464DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.240 at V = 10 V 2.2 GS TrenchFET Power MOSFET 200 0.260 at V = 6.0 V 2.1 GS PWM Optimized for Low Q and Low R g g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D SO-8 SD 1 8 SD 2 7 G SD3 6 GD 4 5 Top View S Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free) Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 200 DS V V Gate-Source Voltage 20 GS T = 25 C 2.2 1.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 1.7 1.3 A A I Pulsed Drain Current 8 DM I Single Avalanch Current 3 AS L = 0.1 mH Single Avalanch Energy E 0.45 mJ AS a I 2.1 1.2 A Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.9 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 37 50 a R Maximum Junction-to-Ambient thJA Steady State 68 85 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72051 www.vishay.com S09-0705-Rev. C, 27-Apr-09 1Si4464DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 4 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 200 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 200 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 8A On-State Drain Current D(on) DS GS V = 10 V, I = 2.2 A 0.195 0.240 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 2.1 A 0.210 0.260 GS D a g V = 15 V, I = 2.2 A 8.0 S Forward Transconductance fs DS D a V I = 2.1 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 12 18 g Q V = 100 V, V = 10 V, I = 2.2 A Gate-Source Charge 2.5 nC gs DS GS D Gate-Drain Charge Q 3.8 gd R Gate Resistance 2.5 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 100 V, R = 100 12 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 15 25 ns D GEN g d(off) t Fall Time 15 25 f Source-Drain Reverse Recovery Time t I = 2.1 A, dI/dt = 100 A/s 60 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 8 8 V = 10 thru 5 V GS 6 6 4 4 T = 125 C C 2 2 4 V 25 C 3 V - 55 C 0 0 02 46 8 0123456 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72051 2 S09-0705-Rev. C, 27-Apr-09 I - Drain Current (A) D I - Drain Current (A) D