X-On Electronics has gained recognition as a prominent supplier of SI4812BDY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4812BDY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4812BDY-T1-GE3 Vishay

SI4812BDY-T1-GE3 electronic component of Vishay
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Part No.SI4812BDY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 9.5A 2.5W 16mohm 10V
Datasheet: SI4812BDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.6894
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5076
10 : USD 1.1931
100 : USD 1.045
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5668
10 : USD 1.2932
100 : USD 0.9898
500 : USD 0.8518
1000 : USD 0.6715
2500 : USD 0.6267
5000 : USD 0.5956
10000 : USD 0.5819
25000 : USD 0.5596
N/A

Obsolete
   
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We are delighted to provide the SI4812BDY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4812BDY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4812BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.016 at V = 10 V 9.5 GS LITTLE FOOT Plus Power MOSFET 30 0.021 at V = 4.5 V 7.7 GS 100 % R Tested g SCHOTTKY PRODUCT SUMMARY V (V) SD V (V) I (A) Diode Forward Voltage DS F 30 0.50 V at 1.0 A 1.4 SO-8 D S 1 8 D S D 2 7 S 3 6 D Schottky Diode G D 4 5 G N-channel MOSFET T op V i e w Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free) S Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Limit Parameter Symbol Unit 10 s Steady State Drain-Source Voltage (MOSFET) 30 V DS Reverse Voltage (Schottky) 30 V V Gate-Source Voltage (MOSFET) 20 GS T = 25 C 9.5 7.3 A a, b I Continuous Drain Current (T = 150 C) (MOSFET) D J T = 70 C 7.7 5.9 A I Pulsed Drain Current (MOSFET) 50 DM a, b I 2.1 1.2 A Continuous Source Current (MOSFET Diode Conduction) S I Average Forward Current (Schottky) 1.4 0.8 F Pulsed Forward Current (Schottky) I 30 FM Single Pulse Avalanche Current I 5 AS L = 0.1 mH E Avalanche Energy 1.25 mJ AS T = 25 C 2.5 1.4 A a, b Maximum Power Dissipation (MOSFET) T = 70 C 1.6 0.9 A P W D T = 25 C 2.0 1.2 A a, b Maximum Power Dissipation (Schottky) T = 70 C 1.3 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter DeviceSymbol TypicalMaximumUnit MOSFET 40 50 a Maximum Junction-to-Ambient (t 10 s) Schottky 50 60 R thJA MOSFET 72 90 a C/W Maximum Junction-to-Ambient (t = Steady State) Schottky 85 100 MOSFET 18 23 a R Maximum Junction-to-Foot (t = Steady State) thJF Schottky 24 30 Notes: a. Surface Mounted on FR4 board. b. t 10 s. Document Number: 73038 www.vishay.com S-83039-Rev. D, 29-Dec-08 1Si4812BDY Vishay Siliconix MOSFET AND SCHOTTKY SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.004 0.100 DS GS Zero Gate Voltage Drain Current I V = 30 V, V = 0 V, T = 100 C 0.7 10 mA DSS DS GS J (MOSFET and Schottky) V = 30 V, V = 0 V, T = 125 C 3.0 20 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 9.5 A 0.013 0.016 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 7.7 A 0.0165 0.021 GS D a g V = 15 V, I = 9.5 A 45 S Forward Transconductance fs DS D I = 1.0 A, V = 0 V 0.45 0.50 S GS a V V Schottky Diode Forward Voltage SD I = 1.0 A, V = 0 V, T = 125 C 0.33 0.42 S GS J b Dynamic Q Total Gate Charge 8.5 13 g Q V = 15 V, V = 5 V, I = 9.5 A Gate-Source Charge 3 nC gs DS GS D Q Gate-Drain Charge 2.6 gd R Gate Resistance 0.3 0.7 1.1 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 15 V, R = 15 13 20 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 20 30 ns d(off) t Fall Time 815 f t I = 1.0 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 22 35 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73038 2 S-83039-Rev. D, 29-Dec-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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