Si4539ADY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.036 at V = 10 V 5.9 GS TrenchFET Power MOSFETs N-Channel 30 0.053 at V = 4.5 V 4.9 GS Compliant to RoHS Directive 2002/95/EC 0.053 at V = - 10 V - 4.9 GS P-Channel - 30 0.090 at V = - 4.5 V - 3.7 GS D S 1 2 SO-8 G 2 S D 1 1 8 1 G 1 G D 2 7 1 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4539ADY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET P-Channel MOSFET Si4539ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A N-Channel P-Channel Parameter Symbol Unit 10 s Steady State 10 s Steady State V Drain-Source Voltage 30 - 30 DS V Gate-Source Voltage V 20 20 GS T = 25 C 5.9 4.4 - 4.9 - 3.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 4.7 3.6 - 3.9 - 2.9 A A I Pulsed Drain Current 30 DM a I 1.7 0.9 - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 2.0 1.1 2 1.1 A a P W Maximum Power Dissipation D T = 70 C 1.3 0.7 1.3 0.7 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. t 10 s 50 62.5 52 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 90 110 C/W Maximum Junction-to-Foot (Drain) Steady State R 32 40 32 40 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71131 www.vishay.com S09-0868-Rev. C, 18-May-09 1Si4539ADY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V = V , I = 250 A N-Ch 1.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.0 DS GS D V = 0 V, V = 20 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V P-Ch 100 DS GS V = 24 V, V = 0 V N-Ch 1 DS GS V = - 24 V, V = 0 V P-Ch - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24 V, V = 0 V, T = 55 C N-Ch 5 DS GS J V = - 24 V, V = 0 V, T = 55 C P-Ch - 5 DS GS J V 5 V, V = 10 V N-Ch 30 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 10 V P-Ch - 30 DS GS V = 10 V, I = 5.9 A N-Ch 0.032 0.036 GS D V = - 10 V, I = - 4.9 A P-Ch 0.043 0.053 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.9 A N-Ch 0.042 0.053 GS D V = - 4.5 V, I = - 3.7 A P-Ch 0.075 0.090 GS D V = 15 V, I = 5.9 A N-Ch 15 DS D a g S Forward Transconductance fs V = - 15 V, I = - 4.9 A P-Ch 9 DS D I = 1.7 A, V = 0 V N-Ch 0.80 1.2 S GS a V V Diode Forward Voltage SD I = - 1.7 A, V = 0 V P-Ch - 0.80 - 1.2 S GS b Dynamic N-Ch 13 20 Q Total Gate Charge g N-Channel P-Ch 15 25 V = 15 V, V = 10 V, I = 5.9 A DS GS D N-Ch 2.3 Q Gate-Source Charge nC gs P-Ch 4 P-Channel N-Ch 2 V = - 15 V, V = - 10 V, I = - 4.9 A DS GS D Q Gate-Drain Charge gd P-Ch 2.0 N-Ch 0.5 2.2 R Gate Resistance g P-Ch 5 12.6 N-Ch 6 12 t Turn-On Delay Time d(on) N-Channel P-Ch 7 15 V = 15 V, R = 15 DD L N-Ch 14 25 t Rise Time r I 1 A, V = 10 V, R = 6 D GEN g P-Ch 10 20 N-Ch 30 60 P-Channel t Turn-Off Delay Time d(off) ns P-Ch 40 80 V = - 15 V, R = 15 DD L N-Ch 5 10 I - 1 A, V = - 10 V, R = 6 D GEN g t Fall Time f P-Ch 20 40 I = 1.7 A, dI/dt = 100 A/s N-Ch 30 60 Source-Drain F t rr Reverse Recovery Time I = - 1.7 A, dI/dt = 100 A/s P-Ch 30 60 F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71131 2 S09-0868-Rev. C, 18-May-09