SI4554DY-T1-GE3 Vishay

Si4554DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) Definition I (A) DS DS(on) g D TrenchFET Power MOSFET e = 10 V 0.024 at V GS 8 100 % R and UIS Tested g e N-Channel 40 0.026 at V = 8 V 6.5 8 GS Compliant to RoHS Directive 2002/95/EC 0.027 at V = 4.5 V 8 GS e 0.027 at V = - 10 V APPLICATIONS GS - 8 e 0.028 at V = - 8 V P-Channel - 40 21.7 Motor Drive GS - 8 0.034 at V = - 4.5 V - 7.5 GS SO-8 D S 1 2 S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G 2 G D G 2 4 5 2 1 Top View Ordering Information: Si4554DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S D 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol N-ChannelP-ChannelUnit Drain-Source Voltage V 40 - 40 DS V V Gate-Source Voltage 20 20 GS e e T = 25 C 8 - 8 C T = 70 C 6.8 - 6.8 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 6.8 - 6.6 b, c b, c T = 70 C A 5.4 - 5.3 Pulsed Drain Current (10 s Pulse Width) I 40 - 40 A DM T = 25 C 2.6 - 2.6 C I Source-Drain Current Diode Current S b, c b, c T = 25 C A 1.6 - 1.6 I Pulsed Source-Drain Current 40 - 40 SM Single Pulse Avalanche Current I 10 - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 520 mJ AS T = 25 C 3.1 3.2 C T = 70 C 22.1 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2 2 b, c b, c T = 70 C A 1.28 1.28 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d t 10 s R 50 62.5 47 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 30 40 29 38 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 C/W (n-channel) and 110 C/W (p-channel). e. Package limited. Document Number: 63660 www.vishay.com S11-2527-Rev. A, 26-Dec-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4554DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min. Max. Unit Typ. Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 40 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 34 D mV/C I = 250 A N-Ch - 4.1 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 5 D V = V , I = 250 A N-Ch 1 2.2 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.2 - 2.5 DS GS D V = 0 V, V = 20 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V P-Ch 100 DS GS V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 6.8 A N-Ch 0.020 0.024 GS D V = - 10 V, I = - 8 A P-Ch 0.021 0.027 GS D V = 8 V, I = 6.7 A N-Ch 0.021 0.026 GS D b R Drain-Source On-State Resistance DS(on) V = - 8 V, I = - 6.5 A P-Ch 0.022 0.028 GS D V = 4.5 V, I = 6.6 A N-Ch 0.022 0.027 GS D V = - 4.5 V, I = - 5 A P-Ch 0.027 0.034 GS D V = 15 V, I = 6.8 A N-Ch 27 DS D b g S Forward Transconductance fs V = - 15 V, I = - 6.7 A P-Ch 25 DS D a Dynamic N-Ch 690 C Input Capacitance iss N-Channel P-Ch 2000 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 115 C Output Capacitance pF oss P-Ch 240 P-Channel N-Ch 41 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 202 V = 20 V, V = 10 V, I = 10 A N-Ch 13.3 20 DS GS D V = - 20 V, V = - 10 V, I = - 10 A P-Ch 41.5 63 DS GS D Total Gate Charge Q g N-Ch 6.5 10 N-Channel P-Ch 21.7 33 nC V = 20 V, V = 4.5 V, I = 10 A DS GS D N-Ch 2.3 Q Gate-Source Charge gs P-Ch 5.6 P-Channel N-Ch 1.7 V = - 20 V, V = - 4.5 V, I = - 10 A DS GS D Q Gate-Drain Charge gd P-Ch 9.8 N-Ch 0.3 1.3 2.6 R Gate Resistance f = 1 MHz g P-Ch 1.3 6.4 12.8 www.vishay.com Document Number: 63660 2 S11-2527-Rev. A, 26-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000