X-On Electronics has gained recognition as a prominent supplier of SI4599DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4599DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4599DY-T1-GE3 Vishay

SI4599DY-T1-GE3 electronic component of Vishay
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Part No.SI4599DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40/40V 5.3/11.8A 3.0/3.1W
Datasheet: SI4599DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3102 ea
Line Total: USD 775.5 
Availability - 41225
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2794
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5762
10 : USD 0.469
30 : USD 0.4155
100 : USD 0.3619
500 : USD 0.3313
1000 : USD 0.314

16644
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8453
10 : USD 0.6635
100 : USD 0.4784
500 : USD 0.3979
1000 : USD 0.3715
2500 : USD 0.3381
5000 : USD 0.3301
25000 : USD 0.322

2404
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.092
43 : USD 0.4046
119 : USD 0.3836
7500 : USD 0.3724

41225
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3102
5000 : USD 0.3071
10000 : USD 0.2851
20000 : USD 0.2822
30000 : USD 0.2794
50000 : USD 0.2765

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI4599DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4599DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si4599DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0355 at V = 10 V 6.8 GS 100 % R Tested g N-Channel 40 5.3 RoHS 0.0425 at V = 4.5 V 100 % UIS Tested 6.2 GS COMPLIANT 0.045 at V = - 10 V - 5.8 GS APPLICATIONS P-Channel - 40 11.8 0.062 at V = - 4.5 V - 5.0 GS Backlight Inverter for LCD Display Full Bridge Converter D S 1 2 SO-8 S D 1 1 8 1 G D 2 7 G 1 1 2 G 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 40 - 40 DS V V Gate-Source Voltage 20 GS T = 25 C 6.8 - 5.8 C T = 70 C 5.4 - 4.7 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 5.6 - 4.7 b, c b, c T = 70 C A 4.4 - 3.7 I A Pulsed Drain Current 20 - 20 DM T = 25 C 2.5 - 2.5 C Source-Drain Current Diode Current I S b, c b, c T = 25 C A 1.6 - 1.6 I Pulsed Source-Drain Current 20 - 20 SM Single Pulse Avalanche Current I 7- 10 AS L = 0 1 mH E Single Pulse Avalanche Energy 2.45 5 mJ AS T = 25 C 3.0 3.1 C T = 70 C 1.9 2 C P Maximum Power Dissipation W D b, c b, c T = 25 C 2.0 A 2.0 b, c b, c T = 70 C A 1.25 1.25 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit b, d R t 10 s 54 64 49 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 33 42 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 C/W. Document Number: 68971 www.vishay.com S-82619-Rev. A, 03-Nov-08 1New Product Si4599DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 44 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 42 D mV/C I = 250 A N-Ch - 5.5 D V Temperature Coefficient V /T GS(th) GS(th) J II = - 250 A P-Ch 4.6 D V = V , I = 250 A N-Ch 1.4 3.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.2 - 2.5 DS GS D N-Ch 100 Gate-Body Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - 100 V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 10 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 10 DS GS V = 10 V, I = 5 A N-Ch 0.0295 0.0355 GS D V = - 10 V, I = - 5 A P-Ch 0.037 0.045 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A N-Ch 0.0355 0.0425 GS D V = - 4.5 V, I = - 4 A P-Ch 0.050 0.062 GS D V = 15 V, I = 5 A N-Ch 22 DS D b g S Forward Transconductance fs V = - 15 V, I = - 5 A P-Ch 14 DS D a Dynamic N-Ch 640 C Input Capacitance iss N-Channel P-Ch 970 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 73 C Output Capacitance pF oss P-Ch 120 P-Channel N-Ch 41 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 95 V = 20 V, V = 10 V, I = 5 A N-Ch 11.7 20 DS GS D V = - 20 V, V = - 10 V, I = - 5 A P-Ch 25 38 DS GS D Q Total Gate Charge g N-Ch 5.3 9 N-Channel P-Ch 11.8 18 nC V = 20 V, V = 4.5 V I = 5 A DS GS D N-Ch 1.9 Q Gate-Source Charge gs P-Ch 3.0 P-Channel N-Ch 1.7 V = - 20 V, V = - 4.5 V, I = - 5 A DS GS D Q Gate-Drain Charge gd P-Ch 5.2 N-Ch 0.5 2.2 4.5 R Gate Resistance f = 1 MHz g P-Ch 1.0 5.5 11 www.vishay.com Document Number: 68971 2 S-82619-Rev. A, 03-Nov-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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