X-On Electronics has gained recognition as a prominent supplier of SI4564DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4564DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4564DY-T1-GE3 Vishay

SI4564DY-T1-GE3 electronic component of Vishay
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Part No.SI4564DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 10A/9.2A N&P-CH MOSFET
Datasheet: SI4564DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.624 ea
Line Total: USD 1560 
Availability - 2425
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
2425
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.624
5000 : USD 0.624
7500 : USD 0.624

14
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.061
10 : USD 1.0325
30 : USD 1.0152
100 : USD 0.9962

   
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Product Category
Transistor Polarity
Package / Case
Packaging
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Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Continuous Drain Current Id N Channel
Continuous Drain Current Id P Channel
Drain Source Voltage Vds N Channel
Drain Source Voltage Vds P Channel
Module Configuration
On Resistance Rdson N Channel
On Resistance Rdson P Channel
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the SI4564DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4564DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4564DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) DS DS(on) I (A) g D Definition 0.0175 at V = 10 V 10 GS TrenchFET Power MOSFET N-Channel 40 9.8 0.020 at V = 4.5 V 9.2 GS 100 % R and UIS Tested g 0.021 at V = - 10 V - 9.2 Compliant to RoHS Directive 2002/95/EC GS P-Channel - 40 21.7 0.028 at V = - 4.5 V - 7.4 GS APPLICATIONS Notebook PCs D S 1 2 SO-8 S D 1 1 8 1 G D 2 7 1 1 G 2 G 1 S D 2 3 6 2 G D 2 4 5 2 Top View S D 1 2 Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol N-ChannelP-ChannelUnit V Drain-Source Voltage 40 - 40 DS V Gate-Source Voltage V 16 20 GS T = 25 C 10 - 9.2 C T = 70 C 8- 7.4 C Continuous Drain Current (T = 150 C) I J D b, c b, c T = 25 C A 8.0 - 7.2 b, c b, c T = 70 C A 6.2 - 5.8 Pulsed Drain Current (10 s Pulse Width) I 40 - 40 A DM T = 25 C 2.6 - 2.6 C Source-Drain Current Diode Current I S b, c b, c T = 25 C A 1.6 - 1.6 Pulsed Source-Drain Current I 40 - 40 SM Single Pulse Avalanche Current I 10 - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 520 mJ AS T = 25 C 3.1 3.2 C T = 70 C 22.1 C P Maximum Power Dissipation W D b, c b, c T = 25 C A 2 2 b, c b, c T = 70 C A 1.28 1.28 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Unit Typ. Max. Typ. Max. b, d R Maximum Junction-to-Ambient t 10 s 50 62.5 47 62.5 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 29 38 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 C/W (N-Channel) and 110 C/W (P-Channel). Document Number: 65922 www.vishay.com S10-0455-Rev. B, 22-Feb-10 1Si4564DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min. Max. Unit Typ. Static V = 0 V, I = 250 A N-Ch 40 GS D V Drain-Source Breakdown Voltage V DS V = 0 V, I = - 250 A P-Ch - 40 GS D I = 250 A N-Ch 40 D V Temperature Coefficient V /T DS DS J I = - 250 A P-Ch - 34 D mV/C I = 250 A N-Ch - 4.1 D V Temperature Coefficient V /T GS(th) GS(th) J I = - 250 A P-Ch 5.0 D V = V , I = 250 A N-Ch 0.8 2.0 DS GS D V Gate Threshold Voltage V GS(th) V = V , I = - 250 A P-Ch - 1.2 - 2.5 DS GS D V = 0 V, V = 16 V N-Ch 100 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 20 V P-Ch 100 DS GS V = 40 V, V = 0 V N-Ch 1 DS GS V = - 40 V, V = 0 V P-Ch - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C N-Ch 10 DS GS J V = - 40 V, V = 0 V, T = 55 C P-Ch - 10 DS GS J V = 5 V, V = 10 V N-Ch 20 DS GS b I A On-State Drain Current D(on) V = - 5 V, V = - 10 V P-Ch - 20 DS GS V = 10 V, I = 8 A N-Ch 0.0145 0.0175 GS D V = - 10 V, I = - 8 A P-Ch 0.0175 0.021 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A N-Ch 0.017 0.020 GS D V = - 4.5 V, I = - 5 A P-Ch 0.0232 0.028 GS D V = 15 V, I = 8 A N-Ch 27 DS D b g S Forward Transconductance fs V = - 15 V, I = - 8 A P-Ch 25 DS D a Dynamic N-Ch 855 C Input Capacitance iss N-Channel P-Ch 2000 V = 20 V, V = 0 V, f = 1 MHz DS GS N-Ch 120 C Output Capacitance pF oss P-Ch 240 P-Channel N-Ch 48 V = - 20 V, V = 0 V, f = 1 MHz DS GS C Reverse Transfer Capacitance rss P-Ch 202 V = 20 V, V = 10 V, I = 10 A N-Ch 20.5 31 DS GS D V = - 20 V, V = - 10 V, I = - 10 A P-Ch 41.5 63 DS GS D Total Gate Charge Q g N-Ch 9.8 15 N-Channel P-Ch 21.7 33 nC V = 20 V, V = 4.5 V, I = 10 A DS GS D N-Ch 2.6 Q Gate-Source Charge gs P-Ch 5.6 P-Channel N-Ch 2.6 V = - 20 V, V = - 4.5 V, I = - 10 A DS GS D Q Gate-Drain Charge gd P-Ch 9.8 N-Ch 0.3 1.5 3.0 R Gate Resistance f = 1 MHz g P-Ch 1.3 6.4 12.8 www.vishay.com Document Number: 65922 2 S10-0455-Rev. B, 22-Feb-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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