X-On Electronics has gained recognition as a prominent supplier of SI4914BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4914BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4914BDY-T1-E3 Vishay

SI4914BDY-T1-E3 electronic component of Vishay
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Part No.SI4914BDY-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 30V 8.48.0A 2.13.1
Datasheet: SI4914BDY-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.7409
10 : USD 1.4424
100 : USD 1.0992
500 : USD 0.9463
1000 : USD 0.7461
2500 : USD 0.6963
5000 : USD 0.6615
10000 : USD 0.6466
25000 : USD 0.6218
N/A

Obsolete
   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Vgs - Gate-Source Voltage
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Cnhts
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We are delighted to provide the SI4914BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4914BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si4914BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.021 at V = 10 V 8.4 GS LITTLE FOOT Plus Integrated Schottky Channel-1 6.7 0.027 at V = 4.5 V 100 % R and UIS Tested 7.4 GS g 30 d Compliant to RoHS Directive 2002/95/EC 0.020 at V = 10 V 8 GS Channel-2 7.0 d 0.025 at V = 4.5 V GS 8 APPLICATIONS Notebook PC SCHOTTKY PRODUCT SUMMARY - System Power dc-to-dc V (V) SD D V (V) I (A) 1 DS Diode Forward Voltage F 30 0.50 V at 1.0 A 2.0 SO-8 G 1 D G 1 1 8 1 N-Channel 1 MOSFET D S /D S /D 1 2 7 1 2 1 2 G S /D 2 3 6 1 2 S S /D 4 5 Schottky Diode 2 1 2 G 2 T op V i e w N-Channel 2 MOSFET Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) S Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 2 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel-1Channel-2Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS d T = 25 C 8.4 8 C T = 70 C 6.7 7.4 C a, b I Continuous Drain Current (T = 150 C) D J b, c b, c T = 25 C A 6.7 7.4 b, c b, c T = 70 C A 5.3 5.7 I A Pulsed Drain Current (10 s Pulse Width) 40 40 DM T = 25 C 2.4 2.8 C Continuous Source-Drain Diode Current I S b, c b, c T = 25 C A 1.0 1.1 I PulseD Source-Drain Current 40 40 SM Single-Pulse Avalanche Current I 15 AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.2 mJ AS T = 25 C 2.7 3.1 C T = 70 C 1.7 2.0 C a, b P W Maximum Power Dissipation D b, c b, c T = 25 C A 1.7 2.0 b, c b, c T = 70 C A 1.1 1.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Package limited. Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 1Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Symbol Parameter Typ. Max. Typ. Max. Unit a t 10 s R 59 70 52 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 36 45 32 40 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 120 C/W for Channel 1 and 115 C/W for Channel 2. MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Ch-1 30 V V = 0 V, I = 250 A Drain-Source Breakdown Voltage V DS GS D Ch-2 30 V Temperature Coefficient V /T Ch-1 35 mV/C DS DS J I = 250 A D V Temperature Coefficient V /T Ch-1 - 6.2 GS(th) GS(th) J V Ch-1 1.2 2.7 V V = V , I = 250 A Gate Threshold Voltage GS(th) DS GS D Ch-2 1.2 2.7 Ch-1 100 I V = 0 V, V = 20 V Gate-Body Leakage nA GSS DS GS Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 I Zero Gate Voltage Drain Current A DSS Ch-1 15 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 10000 Ch-1 20 b I V = 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch-2 20 V = 10 V, I = 8 A Ch-1 0.0165 0.021 GS D V = 10 V, I = 8 A Ch-2 0.0155 0.020 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6 A Ch-1 0.0215 0.027 GS D V = 4.5 V, I = 6 A Ch-2 0.020 0.025 GS D V = 15 V, I = 8 A Ch-1 29 DS D b g S Forward Transconductance fs V = 15 V, I = 8 A Ch-2 33 DS D I = 1.7 A, V = 0 V Ch-1 0.77 1.1 S GS b V V Diode Forward Voltage SD I = 1 A, V = 0 V Ch-2 0.46 0.5 S GS a Dynamic Ch-1 6.7 10.5 Q Total Gate Charge g Channel-1 Ch-2 7.0 11.0 V = 15 V, V = 4.5 V, I = 8 A DS GS D Ch-1 2.8 Q Gate-Source Charge nC gs Ch-2 2.8 Channel-2 Ch-1 2.0 V = 15 V, V = 4.5 V, I = 8 A DS GS D Q Gate-Drain Charge gd Ch-2 2.0 Ch-1 2.9 6.0 R Gate Resistance g Ch-2 2.0 4.0 www.vishay.com Document Number: 69654 2 S09-2109-Rev. E, 12-Oct-09

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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