Si4914BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.021 at V = 10 V 8.4 GS LITTLE FOOT Plus Integrated Schottky Channel-1 6.7 0.027 at V = 4.5 V 100 % R and UIS Tested 7.4 GS g 30 d Compliant to RoHS Directive 2002/95/EC 0.020 at V = 10 V 8 GS Channel-2 7.0 d 0.025 at V = 4.5 V GS 8 APPLICATIONS Notebook PC SCHOTTKY PRODUCT SUMMARY - System Power dc-to-dc V (V) SD D V (V) I (A) 1 DS Diode Forward Voltage F 30 0.50 V at 1.0 A 2.0 SO-8 G 1 D G 1 1 8 1 N-Channel 1 MOSFET D S /D S /D 1 2 7 1 2 1 2 G S /D 2 3 6 1 2 S S /D 4 5 Schottky Diode 2 1 2 G 2 T op V i e w N-Channel 2 MOSFET Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) S Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 2 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Channel-1Channel-2Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS d T = 25 C 8.4 8 C T = 70 C 6.7 7.4 C a, b I Continuous Drain Current (T = 150 C) D J b, c b, c T = 25 C A 6.7 7.4 b, c b, c T = 70 C A 5.3 5.7 I A Pulsed Drain Current (10 s Pulse Width) 40 40 DM T = 25 C 2.4 2.8 C Continuous Source-Drain Diode Current I S b, c b, c T = 25 C A 1.0 1.1 I PulseD Source-Drain Current 40 40 SM Single-Pulse Avalanche Current I 15 AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.2 mJ AS T = 25 C 2.7 3.1 C T = 70 C 1.7 2.0 C a, b P W Maximum Power Dissipation D b, c b, c T = 25 C A 1.7 2.0 b, c b, c T = 70 C A 1.1 1.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Package limited. Document Number: 69654 www.vishay.com S09-2109-Rev. E, 12-Oct-09 1Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Symbol Parameter Typ. Max. Typ. Max. Unit a t 10 s R 59 70 52 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 36 45 32 40 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 120 C/W for Channel 1 and 115 C/W for Channel 2. MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Ch-1 30 V V = 0 V, I = 250 A Drain-Source Breakdown Voltage V DS GS D Ch-2 30 V Temperature Coefficient V /T Ch-1 35 mV/C DS DS J I = 250 A D V Temperature Coefficient V /T Ch-1 - 6.2 GS(th) GS(th) J V Ch-1 1.2 2.7 V V = V , I = 250 A Gate Threshold Voltage GS(th) DS GS D Ch-2 1.2 2.7 Ch-1 100 I V = 0 V, V = 20 V Gate-Body Leakage nA GSS DS GS Ch-2 100 Ch-1 1 V = 30 V, V = 0 V DS GS Ch-2 100 I Zero Gate Voltage Drain Current A DSS Ch-1 15 V = 30 V, V = 0 V, T = 85 C DS GS J Ch-2 10000 Ch-1 20 b I V = 5 V, V = 10 V A On-State Drain Current D(on) DS GS Ch-2 20 V = 10 V, I = 8 A Ch-1 0.0165 0.021 GS D V = 10 V, I = 8 A Ch-2 0.0155 0.020 GS D b R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 6 A Ch-1 0.0215 0.027 GS D V = 4.5 V, I = 6 A Ch-2 0.020 0.025 GS D V = 15 V, I = 8 A Ch-1 29 DS D b g S Forward Transconductance fs V = 15 V, I = 8 A Ch-2 33 DS D I = 1.7 A, V = 0 V Ch-1 0.77 1.1 S GS b V V Diode Forward Voltage SD I = 1 A, V = 0 V Ch-2 0.46 0.5 S GS a Dynamic Ch-1 6.7 10.5 Q Total Gate Charge g Channel-1 Ch-2 7.0 11.0 V = 15 V, V = 4.5 V, I = 8 A DS GS D Ch-1 2.8 Q Gate-Source Charge nC gs Ch-2 2.8 Channel-2 Ch-1 2.0 V = 15 V, V = 4.5 V, I = 8 A DS GS D Q Gate-Drain Charge gd Ch-2 2.0 Ch-1 2.9 6.0 R Gate Resistance g Ch-2 2.0 4.0 www.vishay.com Document Number: 69654 2 S09-2109-Rev. E, 12-Oct-09